Short Channel Vertical Sidewall Transistors

Abstract

For the first time vertical n-channel MOSFETs with implanted S/D-regions and channel lengths down to 50 nm are presented, fabricated in a standard production line with iline lithography.These 50 nm transistors exhibit an excellent transconductance of 560 µS/µm, but suffer from short channel effects in the subthreshold region. The devices with 100 nm channel length, having a somewhat reduced transconductance of 445 µS/µm, showed a very low off-current of 5 pA/µm.We thereby demonstrate the possibility of integrating a high performance short channel transistor in a conventional CMOS process.