Si doping mechanism in Si doped GaAsN

Tsukasaki, Takashi; Hiyoshi, Ren; Fujita, Miki; Makimōto, Toshiki

doi:10.1016/j.jcrysgro.2019.02.042

Cited by 6 publications

(1 citation statement)

References 25 publications

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“…[ 14,15 ] Then, some previous studies proposed that deep electron traps in GaAsN were ascribed to N cluster levels. [ 16,17 ] In addition, in our previous research, [ 18 ] electrons were revealed to exist at both deep electron traps and the shallow Si donor level in moderately Si‐doped GaAsN because these electron traps were revealed to have small density of states around the level in the order of 10 17 cm −3 . Therefore, there are two possible dominant PL processes for this moderately Si‐doped GaAsN.…”

Section: Resultsmentioning

confidence: 96%

Photoluminescence Mechanism in Heavily Si‐Doped GaAsN

Tsukasaki

Hiyoshi

Fujita

et al. 2021

Crystal Research and Technology

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The photoluminescence (PL) mechanism is discussed for heavily Si‐doped GaAsN, and the evaluation method of electron effective mass (me*) is proposed using its PL peak energy. PL peak energy monotonically decreases as increasing temperature, so the S‐shape characteristic is vanished for this heavily Si‐doped GaAsN as opposed to moderately Si‐doped GaAsN. This result shows that the dominant PL process is an optical transition from the Fermi energy to the top of valence band independent of temperature for this heavily Si‐doped GaAsN, as with degenerate n‐type GaAs. Because PL peak energy is expressed by the sum of bandgap energy, the increased energy of the Burstein–Moss effect, and the decreased energy of the bandgap narrowing, me* is calculated to be 0.098 m0 for this heavily Si‐doped GaAsN with nitrogen composition of 0.6%, where m0 is the electron mass. This result agrees well with previous studies, meaning that the method for estimation of me is effective for dilute GaAsN.

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Section: Resultsmentioning

confidence: 96%