(Si)GeSn nanostructures for light emitters

Rainko, Denis; Stange, Daniela; Driesch, Nils von den; Schulte-Braucks, C.; Mußler, Gregor; Ikonić, Z.; Hartmann, Jean‐Michel; Luysberg, M.; Mantl, S.; Grützmacher, Detlev; Buca, D.

doi:10.1117/12.2227573

SPIE Proceedings

2016

DOI: 10.1117/12.2227573

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(Si)GeSn nanostructures for light emitters

Denis Rainko

Daniela Stange

Nils von den Driesch

et al.

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Cited by 2 publications

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Defects in Ge and GeSn and their impact on optoelectronic properties

Giunto,

Fontcuberta i Morral

2024

Applied Physics Reviews

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GeSn has emerged as a promising semiconductor with optoelectronic functionality in the mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip Si photonics. Multiple challenges to achieve optoelectronic-grade GeSn have been successfully solved in the last decade. We stand today on the brink of a potential revolution in which GeSn could be used in many optoelectronic applications such as light detection and ranging devices and lasers. However, the limited understanding and control of material defects represents today a bottleneck in the performance of GeSn-based devices, hindering their commercialization. Point and linear defects in GeSn have a strong impact on its electronic properties, namely, unintentional doping concentration, carrier lifetime, and mobility, which ultimately determine the performance of optoelectronic devices. In this review, after introducing the state-of-the-art of the fabrication and properties of GeSn, we provide a comprehensive overview of the current understanding of GeSn defects and their influence on the material (opto)electronic properties. Where relevant, we also review the work realized on pure Ge. Throughout the manuscript, we highlight the critical points that are still to solve. By bringing together the different fabrication techniques available and characterizations realized, we offer a wholistic view on the field of GeSn and provide elements on how it could move forward.

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Defects in Ge and GeSn and their impact on optoelectronic properties

Giunto,

Fontcuberta i Morral

2024

Applied Physics Reviews

View full text Add to dashboard Cite

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SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review

Olorunsola¹,

Said²,

Ojo³

et al. 2022

J. Phys. D: Appl. Phys.

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Recent studies of SiGeSn materials and optoelectronic devices hold great promise for photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and power-efficient. Thanks to the breakthrough of low temperature material growth techniques, device-quality level materials have been grown, following by the demonstration of light-emitting diodes, photodetectors, and optically pumped and electrically injected band-to-band lasers. While the exciting developments in bulk devices were reported, the quantum wells (QWs) have been investigated targeting the dramatically improved and/or novel device performance via variety of quantum confinement effects. In this review, we summarize the recent progress on development of SiGeSn QWs, including the fundamental optical and transition studies and optoelectronic device applications. The inspirational results reveal the possibility of all-group-IV PICs with photonics and electronics monolithically integrated on a single-chip.

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(Si)GeSn nanostructures for light emitters

Cited by 2 publications

References 23 publications

Defects in Ge and GeSn and their impact on optoelectronic properties

Defects in Ge and GeSn and their impact on optoelectronic properties

SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review

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