Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: II . Comparison with Experiment and Discussion

Ho, C. P.; Plummer, J. D.

doi:10.1149/1.2129321

Cited by 58 publications

(25 citation statements)

References 38 publications

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“…As the total chemical solid solubility varies as a function of temperature, so does electrical solubility (17). In this region, the oxidation kinetics are expected to be mainly controlled by the surface reaction between silicon and the oxidant, which, in turn, is affected by the heavy concentration of the dopant in silicon (1,2). At 1000~ no change is expected because the films were doped at the same temperature.…”

Section: Resultsmentioning

confidence: 99%

“…In the most widely accepted model, that of Ho and Plummer (1,2), the presence of a dopant in the silicon shifts the Fermi level and causes the number of vacancies to increase, which in turn enhances the surface reaction between the silicon and the oxidant. The effect of doping on the oxidation kinetics of single crystal siIicon has also been investigated, and accurate models are available.…”

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confidence: 99%

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Thermal Oxidation of Heavily Phosphorus‐Doped Thin Films of Polycrystalline Silicon

Saraswat

Singh

1982

J. Electrochem. Soc.

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The thermal oxidation of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped to solid solubility with phosphorus has been studied over temperatures ranging from 750 ~ to 1100~ for durations of 10 min to 88 hr. It has been observed that heavy doping increases the oxidation rate so that it is similar to that of single crystal silicon, however, enhancement is more like that of polycrystalline silicon. Calculation of rate constants was done based on the linear-parabolic oxidation model. Reasonable values of the parabolic rate constant but anomalous values of the linear rate constant were obtained. Based on these observations and conductivity of the residual layer of the polycrystallinesilicon film it can be concluded that because of the presence of the grain boundaries several additional factors, such as dopant segregation and higher diffusivity at the grain boundaries, different oxidation rates of the grains and the grain boundaries substantially alter the kinetics of oxidation.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Thermal Oxidation of Heavily Phosphorus‐Doped Thin Films of Polycrystalline Silicon

Saraswat

Singh

1982

J. Electrochem. Soc.

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“…This is known to affect the oxidation rate (Ho andPlummer, 1979a, 1979b) and may affect the boundary conditions for point-defect injection or absorption in an unknown manner. To circumvent this problem, a lightly doped epitaxial silicon layer was grown on an extrinsic "8 substrate that contained a ' 8 tracer profile (Kashio and Kato, 1988).…”

Section: Oeo Under Extrinsic Conditiorismentioning

confidence: 99%

Point defects and dopant diffusion in silicon

1989

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Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects {vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.

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“…Figure 4 shows a variation of typically 5 Å in oxide thickness on single wafers, and up to 15 Å from wafer to wafer. Variation in substrate dopant concentration is known to affect oxidation rates, 33,34 which can explain variations in oxide thickness.…”

Section: Resultsmentioning

confidence: 99%

Ultralarge area MOS tunnel devices for electron emission

et al. 2007

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A comparative analysis of metal-oxide-semiconductor ͑MOS͒ capacitors by capacitance-voltage ͑C-V͒ and current-voltage ͑I-V͒ characteristics has been employed to characterize the thickness variations of the oxide on different length scales. Ultralarge area ͑1 cm 2 ͒ ultrathin ͑ϳ5 nm oxide͒ MOS capacitors have been fabricated to investigate their functionality and the variations in oxide thickness, with the use as future electron emission devices as the goal. I-V characteristics show very low leakage current and excellent agreement to the FowlerNordheim expression for the current density. Oxide thicknesses have been extracted by fitting a model based on Fermi-Dirac statistics to the C-V characteristics. By plotting I-V characteristics in a Fowler plot, a measure of the thickness of the oxide can be extracted from the tunnel current. These apparent thicknesses show a high degree of correlation to thicknesses extracted from C-V characteristics on the same MOS capacitors, but are systematically lower in value. This offset between the thicknesses obtained by C-V characteristics and I-V characteristics is explained by an inherent variation of the oxide thickness. Comparison of MOS capacitors with different oxide areas ranging from 1 cm 2 to 10 m 2 , using the slope from Fowler-Nordheim plots of the I-V characteristics as a measure of the oxide thickness, points toward two length scales of oxide thickness variations being ϳ1 cm and ϳ10 m, respectively.

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Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: II . Comparison with Experiment and Discussion

Cited by 58 publications

References 38 publications

Thermal Oxidation of Heavily Phosphorus‐Doped Thin Films of Polycrystalline Silicon

Thermal Oxidation of Heavily Phosphorus‐Doped Thin Films of Polycrystalline Silicon

Point defects and dopant diffusion in silicon

Ultralarge area MOS tunnel devices for electron emission

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