Si vertical JFET at low temperatures ; I-V characteristics and low frequency noise

Abstract

Measurements of the source to drain currentlvoltage, Id(Vds), characteristics and low frequency (f<lOOkHz) noise spectral density function, Sv(f), were carried out at 77K<T<300K on the vertical JFET (BiCMOS-compatible technology). We found that Id(Vds) characteristics do not significantly depend on T, down to loOK, thus low temperature applications of the device are plausible. At f<lOMIz, Sv(f) was found to be dominated by the l/f component. At low T, Sv(f) shows features characteristic for the generation-recombination process, which become stronger at large and negative gate bias polarizations. This suggests that the recombination centers are localized at the interface between the channel and the depletion region near the gate.