SiC-FET-type NOx Sensor for High-Temperature Exhaust Gas

Sasago, Y.; Nakamura, Hitoshi; Odaka, Takahiro; Isobe, Aki; Komatsu, Setsuko; Nakamura, Yusuke; Yamawaki, Taizo; Yorita, Chiko; Ushifusa, Nobuyuki; Yoshikawa, Kohei; Ono, Kyosuke; Anzai, Yumiko; Machida, Shinjiro; Kinoshita, Masaharu; Fujisaki, Koji; Usagawa, Toshiyuki; Okishiro, Kenji; Sugiyama, Yasuhiko

doi:10.1109/iedm.2018.8614631

Cited by 5 publications

(5 citation statements)

References 5 publications

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“…Another SiC-FET-type gas sensor detected for very low concentration (<1 ppm@NO) with the gate materials as yttria-stabilized zirconia, nickel oxide, and platinum. 117 It was reported that the temperate and the gate bias modulation improved the gas sensor selectivity. 118 Figure 19 reported the sensor response, sensitivity over concentration and the bias voltage to understand the role of transducer parameter in FET sensor performance.…”

Section: Wideband Semiconductor Gas Sensormentioning

confidence: 99%

Review—Semiconductor Materials and Devices for Gas Sensors

Raju¹,

Li²

2022

J. Electrochem. Soc.

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Gas sensors are frequently used for detecting toxic gases and vapors for environmental control, industrial monitoring, and household safety. Semiconductor conductivity can be modified by doping or fine-tuned by applying an electric or magnetic field in an ultra-wide range (10-7 S/cm to 102 S/cm). The conduction of semiconductor is significantly raised or reduced upon the exposure to external conditions, such as temperature variation, light, heat, mechanical stress, or chemicals. Thus, semiconductors are excellent materials for sensors and the device structures are critical for sensing performance. The commonly used semiconductors materials include Si, Ge, III-V, and metal oxide semiconductors. Recently carbon-based materials gain signification attention due to their unique electrical, optical and mechanical properties. There are two major semiconductor gas sensors: resistor-based and FET-based sensors. In this review, the semiconductor materials, sensor device structure as well as gas sensing mechanisms will be systematically categorized, described and explored, with the focus on metal oxides, GaN, SiC, 2D-TMD and carbon-based gas sensors. The recent progress in new semiconductor gas sensors will be thoroughly reviewed and summarized, with a hope to show the trend in semiconductor gas sensor technology.

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Section: Wideband Semiconductor Gas Sensormentioning

confidence: 99%

Review—Semiconductor Materials and Devices for Gas Sensors

Raju¹,

Li²

2022

J. Electrochem. Soc.

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“…As shown in Fig. 1(a), the SiC-FET NOx sensor chip measuring 2 × 2 mm 2 includes a sensor FET, a reference FET, and platinum electrodes for the well, source, gate, and drain terminals on the edges on both sides [1]. Both FETs have a gate layer stack of yttria-stabilized zirconia (YSZ), nickel oxide (NiO), and platinum (Pt) on a gate oxide layer (Fig.…”

Section: Device Structure and Operation Principlementioning

confidence: 99%

“…The process flow of the sensor chip is explained in Ref. [1]. Since NO, O2, SO2, CO, and NH3 can only be sensed at high temperature, a heater should be placed near the sensor.…”

Section: Device Structure and Operation Principlementioning

confidence: 99%

“…By virtue of the large band gap of SiC, SiC FETs are capable of on-and off-switching at over 500°C; thus, the Vth shift of the SiC-FET gas sensor can be detected [1]. On the other hand, switching at 500°C is impossible for Si FETs.…”

Section: Gas-sensing Characteristicsmentioning

confidence: 99%

“…In Ref. [1], we developed an SiC-FET-type NOx sensor for high-temperature exhaust gas with a subppm nitrogen monoxide (NO) detection capability.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

SiC-FET Gas Sensor for Detecting Sub-ppm Gas Concentrations

Sasago¹,

Nakamura²,

Odaka³

et al. 2020

Adv. sci. technol. eng. syst. j.

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This paper describes a silicon carbide-field effect transistor (SiC-FET) gas sensor that is able to detect NO, O2, NH3, CO, and SO2. The gate of the sensor FET is a gas detection layer that consists of yttria-stabilized zirconia, nickel oxide, and platinum. The threshold voltages of the sensor depend on the target gas concentration, measurement temperature, and sensor gate materials. The device on SiC substrate can measure gas at temperatures up to 800°C. The gate material dependence and the wide-range temperature dependence of the sensitivity make it possible to detect the concentration of each component in a mixture of gases. In addition, a gate stack composed of composite materials improves the sensitivity of the FET sensor by helping to maintain the sensor's heat resistance and the reproducibility of its measurements.

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