SiC, Si and diamond detectors for comparison of laser-generated plasma in TNSA regime

Abstract

Monocrystalline SiC, Si and Diamond detectors have been used to monitor the radiations emitted from TNSA laser-generated plasma using a high-intensity fs laser. The comparison of their spectra was performed monitoring in time-of-flight the forward emitted TNSA plasma radiation. Carbon, aluminum, copper and gold targets were irradiated with an intensity of the order of 1019 W/cm2. SiC detector, with 80 microns depth active region, gave the best response to detect fast UV and X-rays, relativistic and cold electrons, and energetic protons and light accelerated ions. The experiments demonstrate the advantages to use semiconductor detectors to characterize the plasma enhancing the importance of the thickness of the target with respect to its electronic density.

SiC and Ion collectors as diagnostics of laser-generated plasma at intensity of 1010W/cm2

“…The detection efficiency of such detectors is only limited by their thickness and absorption in the contact film on the input window, thus uncovered surfaces can be employed to reveal UV and low energetic ions [12]. Moreover, SiC detectors have been used with active region depth from some microns up to 80 microns, to detect low energy and high energy ions and soft and hard X-rays, respectively [13,14].…”