Significantly improved energy storage properties and cycling stability in La-doped PbZrO3 antiferroelectric thin films by chemical pressure tailoring

Cai, Henghui; Yan, Shiguang; Zhou, Mingxing; Liu, Ningtao; Ye, Jiaming; Song, Lingnan; Cao, Fei; Dong, Xianlin; Wang, Genshui

doi:10.1016/j.jeurceramsoc.2019.07.024

Cited by 53 publications

(18 citation statements)

References 48 publications

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“…The W rec is 21.11 J/cm 3 at 1760 kV/cm for the PZT/PZO multilayers. Compared with the energy-storage density reported in the literature at the same level of operation voltage, such as 14.8 J/cm 3 at 1592 kV/cm for PLZT/PZO multilayers and 13 J/cm 3 at 2400 kV/cm for PZT/Al 2 O 3 /PZT films, our energy-storage density is a little higher under a similar operational electric field; however, our maximum energy-storage density is not larger than others [ 7 , 14 , 20 ]. It demonstrates that we also need to enhance the electric breakdown strength in the future.…”

Section: Introductionsupporting

confidence: 54%

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

Zhang

Chen

et al. 2021

Nanomaterials

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PbZr0.35Ti0.65O3 (PZT), PbZrO3 (PZO), and PZT/PZO ferroelectric/antiferroelectric multilayer films were prepared on a Pt/Ti/SiO2/Si substrate using the sol–gel method. Microstructures and physical properties such as the polarization behaviors, leakage current, dielectric features, and energy-storage characteristics of the three films were systematically explored. All electric field-dependent phase transitions, from sharp to diffused, can be tuned by layer structure, indicated by the polarization, shift current, and dielectric properties. The leakage current behaviors suggested that the layer structure could modulate the current mechanism, including space-charge-limited bulk conduction for single layer films and Schottky emission for multilayer thin films. The electric breakdown strength of a PZT/PZO multilayer structure can be further enhanced to 1760 kV/cm, which is higher than PZT (1162 kV/cm) and PZO (1373 kV/cm) films. A recoverable energy-storage density of 21.1 J/cm3 was received in PZT/PZO multilayers due to its high electric breakdown strength. Our results demonstrate that a multilayer structure is an effective method for enhancing energy-storage capacitors.

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Section: Introductionsupporting

confidence: 54%

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

Zhang

Chen

et al. 2021

Nanomaterials

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“…On the other hand, unlike the effects of Ba 2+ doping, the replacement of Pb 2+ by a smaller La 3+ ion would increase the antiferroelectricity of the material and raise the AFE‐FE phase switching field, resulting in an enhancement of W rec . [ 17,18 ] Furthermore, in the most typical (Pb,La)(Zr,Sn,Ti)O 3 AFE ceramics system, it was discovered that Ti 3+ was easily formed from the Ti 4+ at B site during the sintering process, [ 8,19 ] which decreases the electric insulation and lowers the breakdown strength (BDS) and eventually have an adverse effect on the energy storage performance of lead‐based AFE ceramics. [ 9 ]…”

Section: Introductionmentioning

confidence: 99%

Ultralow Electrical Hysteresis along with High Energy‐Storage Density in Lead‐Based Antiferroelectric Ceramics

Huang

Yan

et al. 2020

Adv Elect Materials

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materials (FE), relaxor ferroelectric materials, and antiferroelectric materials (AFEs). [2][3][4][5][6][7] Among them, antiferroelectric materials are preferred candidates for obtaining an exceptional energy storage density due to the high saturation polarization (P s ) and zero remnant polarization (P r ). [7] A schematic illustration of the energy storage mechanism of antiferroelectric materials is shown in Figure S1 in the Supporting Information. The W tot and W rec of antiferroelectrics are calculated by the area between the phase switching loop and the polarization axis and can be described by the following equations [7,8] where P max , P r , and E represent the maximum polarization, the remnant polarization, and applied electric field, respectively. The difference between W rec and W tot represents the energy dissipation (W loss ) and the ratio of W rec to W tot is defined as the energy efficiency, which can be described by the following equation [7,8] 100% 100% rec tot rec rec l ossIn comparison with lead-free antiferroelectric ceramics, PbZrO 3 -based antiferroelectric ceramics have always been a more popular topic because of their superior energy storage performance. It is particularly interesting that a minor variation of doping ions at the A or B site of the perovskite (ABO 3 ) structure may display huge differences in materials properties. Hence, scholars have continuously focused on investigating the structure-property relationships of PbZrO 3 -based AFE ceramics, such as tailoring the phase transition characteristics of AFE ceramics via ions doping, or utilizing unique fabrication methods to increase the energy storage density, and so forth. [8][9][10][11][12] Recently, a record-high recoverable energy storage density of 11.18 J cm −3 was obtained in Sr-doped (Pb 0.94 La 0.02 Sr 0.04 )(Zr 0.9 Sn 0.1 ) 0.995 O 3 AFE ceramics that prepared by tape-casting method. [9] However, the large electrical hysteresis resulted from the first-order antiferroelectric-ferroelectric (AFE-FE) phase transition has always been an apparent drawback of AFE ceramics, [13] leading to the high energy dissipation, Antiferroelectric ceramics with extraordinary energy-storage density have gained exponentially soaring attention for their applications in pulsed power capacitors. Nevertheless, high energy dissipation is a deficiency of antiferroelectric materials. The modulation of Ba/La-doped (Pb 0.91 Ba x La 0.06−2x/3 ) (Zr 0.6 Sn 0.4 )O 3 (x = 0.015, 0.03, 0.045, 0.06) antiferroelectric ceramics is aimed at increasing the energy efficiency and obtaining an ideal energy storage density. The traditional solid-state reaction is exploited for ceramics fabrication and all prepared samples exhibit an ultralow electrical hysteresis due to the local structural heterogeneity, as verified by Raman spectroscopy. Of particular importance is the fact that the (Pb 0.91 Ba 0.045 La 0.03 )(Zr 0.6 Sn 0.4 ) O 3 ceramic possesses an excellent recoverable energy storage density (W rec = 8.16 J cm −3 ) and a remarkable energy efficiency (η = 92.1...

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“…Linear and nonlinear ceramic materials can show both high permittivities and good thermal stability. The energy storage properties of several types of ceramic materials in thick/thin films and bulk form have been explored. − Moreover, many solid ceramic solutions have been investigated for energy storage applications. Nonetheless, despite considerable research efforts, the energy storage densities of bulk ceramic materials (<10 J/cm 3 ) are not high enough because of their low breakdown electric fields (<1 MV/cm).…”

Section: Dielectric Materials For Energy-storing Electrostatic Capaci...mentioning

confidence: 99%

Fluorite-Structured Ferroelectric-/Antiferroelectric-Based Electrostatic Nanocapacitors for Energy Storage Applications

Ali

Zhou

Sun

et al. 2020

ACS Appl. Energy Mater.

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To date, several portable, wearable, and even implantable electronics have been incorporated into ultracompact devices as miniaturized energy-autonomous systems (MEASs). Electrostatic supercapacitors could be a promising energy storage component for MEASs due to their high power density and ultrashort charging time. Several dielectric materials, including ceramics, polymers, and glass, have been studied for energy storage applications. However, due to their large thickness (in micrometers or larger), these materials are inappropriate for use as nanocapacitors. Recently, ferroelectric and antiferroelectric fluorite-structured dielectrics (e.g., zirconia and hafnia) have been studied intensively for data storage and energy-related applications. Their nanoscale (nm) thickness makes these materials suitable for use as nanocapacitors in MEASs. This work reviews the energy storage properties of fluorite-structured antiferroelectric oxides (HfO2 and ZrO2), along with 3-D device structures, the effect of negative capacitance on the energy storage characteristics of fluorites, and the future prospects of this research field.

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Significantly improved energy storage properties and cycling stability in La-doped PbZrO3 antiferroelectric thin films by chemical pressure tailoring

Cited by 53 publications

References 48 publications

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

Ultralow Electrical Hysteresis along with High Energy‐Storage Density in Lead‐Based Antiferroelectric Ceramics

Fluorite-Structured Ferroelectric-/Antiferroelectric-Based Electrostatic Nanocapacitors for Energy Storage Applications

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