Silicon (Amorphous) (a-Si)

Piller, H.

doi:10.1016/b978-0-08-054721-3.50030-7

Cited by 27 publications

(4 citation statements)

References 10 publications

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“…Figure 9(a) gives the absorption coefficient of the Micralyne film versus wavelength, λ . Results are compared to reported values for crystalline silicon [ 55 ], as well as hydrogenated and non-hydrogenated amorphous silicon [ 56 ]. In most of the visible band, the Micralyne film absorbs about ten times as much light as does crystalline silicon.…”

Section: Design and Fabrication Of A Prototypementioning

confidence: 99%

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

Skorka

Joseph

2011

Sensors

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Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors.

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Section: Design and Fabrication Of A Prototypementioning

confidence: 99%

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

Skorka

Joseph

2011

Sensors

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“…7,9) The optical constant of a-Si used here were obtained from that deposited on a quartz substrate by rf discharge in high-purity silane gas. 10) Consequently, the fitting parameters in the model were set to the thicknesses of the SiO 2 layer and damaged Si layer, and the ratio of the applied component phases in the damaged Si layer.…”

Section: Basic Model Analysismentioning

confidence: 99%

“…7) In fact, there are several reports which indicate that the optical properties of implanted a-Si differ from those of deposited a-Si. 10,11) However, this approach has not been established sufficiently because it is difficult to distinctly define the degree of amorphization among a-Si samples prepared under various conditions. The other idea is to apply microcrystalline Si data.…”

Section: Basic Model Analysismentioning

confidence: 99%

Investigation of Surface Damage in Si Exposed to Ar Plasma by Spectroscopic Ellipsometry and Grazing X-Ray Diffraction

Yamada

Mizuno

Kitahara

et al. 2005

Jpn. J. Appl. Phys.

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Low-damage processes in plasma-surface interactions, particularly lattice deformation and the degree of damage in a single-crystal Si surface exposed to Ar plasma, are investigated by spectroscopic ellipsometry (SE) and grazing X-ray diffraction. The dielectric function spectrum of the damaged Si layer in nano-depth is obtained by use of damage depth estimated by a method based on SE model analysis and confirmed by step etching combined with SE measurement. The third-derivative lineshape of the imaginary part ε 2 of the complex-dielectric function provides the damage dependences of interband transition energy and broadening parameter for the E 1 (Λ3→Λ1) optical interband transition. The result shows that the surface damage proceeds through lattice expansion and relaxation. The lattice deformation in the damaged surface is also investigated by grazing X-ray diffraction. The X-ray rocking curve around (422)Si is asymmetric and involves small subsidiary curves corresponding to the lattice expansion and relaxation. These observations are in good agreement with the lattice deformation process obtained from the SE analysis.

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“…Experimental IR data of surface-implanted sc-Si has also been available for decades [4], [5]. Experiments on the Si thin films optical properties at the visible (VIS) and the near-IR (NIR) spectra have been published especially for amorphous hydrogenated Si (a-or α-Si:H), with the application in solar cells [6]- [8], and also for poly-Si [7]- [10]. Our application of the poly-Si film is a distributed Bragg reflector [11] of a MOEMS Fabry-Perot interferometer (FPI) [12], tuneable over the TIR wavelengths 7 μm < λ < 11 μm.…”

Section: Introductionmentioning

confidence: 99%

Infrared Spectroscopy Study of a Poly-Silicon Film for Optimizing the Boron-Implanting Dose

Tuohiniemi

Blomberg

Gao

2013

J. Microelectromech. Syst.

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An experiment was carried out for recording the infrared transmission between 3 and 16 μm for a free-standing poly-silicon (Si) thin film as a function of the boron-ion implanting. The optical constants were extracted in order to optimize the postdeposition implanting of the membranes in a surface micromachined Fabry-Perot interferometer for the thermal infrared. The free-carrier concentration must not degrade the refractive index n significantly since a high and constant value over the application wavelength range is desired. Moreover, an increase in the extinction coefficient k is detrimental for the interferometer performance. On the other hand, poly-Si electrical conductivity must be doped high enough to avoid static charging and to prevent any layout-dependent distribution of the applied control voltage. We applied the variable-angle transmission spectrometry for recording the data of suspended poly-Si membranes, doped with different levels of implanting dose. The Drude model dispersion formula was exploited for extracting the optical constants n(λ) and k(λ). The optical constants are presented as a function of the dopant concentration and the electrical resistivity.[2012-0292]

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Silicon (Amorphous) (a-Si)

Cited by 27 publications

References 10 publications

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

Investigation of Surface Damage in Si Exposed to Ar Plasma by Spectroscopic Ellipsometry and Grazing X-Ray Diffraction

Infrared Spectroscopy Study of a Poly-Silicon Film for Optimizing the Boron-Implanting Dose

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