Silicon Carbide Materials for Biomedical Applications

Saddow, Stephen E.

doi:10.1016/b978-0-12-802993-0.00001-0

Cited by 25 publications

(36 citation statements)

References 50 publications

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“…Silicon carbide is a semiconductor which possesses extreme resistance to corrosive chemistries, experiences only limited oxidation, and has demonstrated no appreciable toxicity [ 65 , 66 , 67 , 68 ]. We have demonstrated that hexagonal silicon carbide junction isolation electrode devices have a much higher forward bias turn-on potential than Si (2.3 V vs. 0.7 V).…”

Section: Discussionmentioning

confidence: 99%

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Bernardin

Frewin²,

Everly³

et al. 2018

Micromachines

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Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor. The device support was micromachined from p-type SiC with conductors created from n-type SiC, simultaneously providing electrical isolation through the resulting p-n junction. Electrodes possessed geometric surface area (GSA) varying from 496 to 500 K μm2. Electrical characterization showed high-performance p-n diode behavior, with typical turn-on voltages of ~2.3 V and reverse bias leakage below 1 nArms. Current leakage between adjacent electrodes was ~7.5 nArms over a voltage range of −50 V to 50 V. The devices interacted electrochemically with a purely capacitive relationship at frequencies less than 10 kHz. Electrode impedance ranged from 675 ± 130 kΩ (GSA = 496 µm2) to 46.5 ± 4.80 kΩ (GSA = 500 K µm2). Since the all-SiC devices rely on the integration of only robust and highly compatible SiC material, they offer a promising solution to probe delamination and biological rejection associated with the use of multiple materials used in many current INI devices.

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Section: Discussionmentioning

confidence: 99%

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Bernardin

Frewin²,

Everly³

et al. 2018

Micromachines

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“…In this context, extensive research has been done on growth of SiC-based films at low- or high-temperature CVD processes aiming to produce high-quality films for application not only in the field of MEMS, but also for hard coatings [ 83 ], biotechnology [ 117 ], chemical sensors [ 116 ], and other electronic applications. At high-temperature CVD processes (>500 °C [ 8 ]), we can cite the APCVD, LPCVD, and MOCVD methods.…”

Section: Cvd-based Sic Requirements For Development Of Mems/nems Dmentioning

confidence: 99%

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

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“…Основные области их применения различны. Так, на основе 3С-SiC изготавливаются силовые приборы, 4H-SiC применяется в силовой и высокочастотной электронике, а 6H-SiC используется при производстве светодиодов [6].…”

Section: выводы и заключениеunclassified

Modeling of temperature dependence of holes mobility in silicon carbide

Ivanov¹,

Козлов²

2019

RussiaMolodaya

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Silicon Carbide Materials for Biomedical Applications

Cited by 25 publications

References 50 publications

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Modeling of temperature dependence of holes mobility in silicon carbide

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