Silicon etched-groove permeable base transistor fabrication with cutoff frequencies (fT, fmax) above 25 GHz

Gruhle, A.; Badoz, P. A.; Chevalier, Florian; Halimaoui, A.; Lalanne, F.; Mouis, M.; Régolini, J. L.; Vincent, Gilbert; Bensahel, D.

doi:10.1016/0167-9317(91)90176-e

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Silicon etched-groove permeable base transistor fabrication with cutoff frequencies (fT, fmax) above 25 GHz

Cited by 6 publications

References 4 publications

Bipolar Permeable Transistor

Bipolar Permeable Transistor

Single and multi-section CTL and branch-line CPW directional couplers with broadband performances for SIMMWIC

The effect of using different transport models in computer simulations of the permeable-base transistor

Contact Info

Product

Resources

About