Silicon from microwave plasmas: Optical properties and their relation to structure

Herak, T. V.; Schellenberg, John; Shufflebotham, P. K.; Kao, K. C.; Card, H.C.

doi:10.1016/0022-3093(88)90424-3

Cited by 4 publications

(1 citation statement)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in Ref. , according to the expression for the static refractive index, the refractive index of a silicon‐containing film at a fixed wavelength is inversely proportional to a quantity which is a measure of the covalent bond strength. Thus, the replacement of strong SiO bonds by weaker SiSi bonds leads to an increase in the refractive index of the film at a fixed wavelength.…”

Section: Resultsmentioning

confidence: 99%

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

Баранов

Khmel

Zamchiy

et al. 2016

Physica Status Solidi (a)

View full text Add to dashboard Cite

In this work, hydrogenated amorphous silicon suboxide (a‐SiOx:H) thin films have been prepared by gas‐jet electron beam plasma chemical vapor deposition method (GJ EBP CVD) at a substrate temperature 260 °C. The argon to monosilane ratio R = [Ar]/[SiH4] was varied and the influence of the ratio R on the structural and optical properties was investigated. In this method, R affects an oxygen concentration in the film of the silicon suboxide. FTIR measurement showed a decrease of the oxygen concentration from 40.7 to 11% with increasing R. The analysis of FTIR spectra showed the containing a large number polysilane (Si–H2)n groups that suggest the material column structure. Optical transmission spectra were recorded to investigate the optical properties and thickness of the a‐SiOx:H thin films. The maximum of the growth rate is 2 nm s−1 at R = 80. The optical bandgap Eg was derived from Tauc plots. It was found that the increase in the oxygen concentration not only leads to the increase optical bandgap, but also to the decrease the refraction index.

show abstract

Section: Resultsmentioning

confidence: 99%

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

Баранов

Khmel

Zamchiy

et al. 2016

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

Behavior of downstream plasmas generated in a microwave plasma chemical-vapor deposition reactor

Shufflebotham

Thomson

Card

1988

Journal of Applied Physics

View full text Add to dashboard Cite

The behavior of electron-cyclotron resonant (ECR) and non-ECR H2 plasmas generated in a microwave plasma chemical-vapor deposition reactor have been studied as a function of magnetic field strength and absorbed microwave power. Plasma diagnostics were performed with a planar electrostatic probe, microwave power measurements, and visual inspection. The probe measurements were concerned with the plasma impingent on a sample table placed downstream from the active core of the plasma. ECR plasmas were found to be more efficient, stable, uniform, and dense than plasmas not generated by ECR. All properties of the ECR plasmas measured by the downstream probe showed a gentle monotonic increase with the magnetic field strength. This was attributed to a reduction in the spacing between the probe and the resonant zone. In the ECR plasmas the average electron temperature was 3 eV and the average density was 1016 m−3. The degree of ionization was on the order of 5×10−4.

show abstract

Optical properties and crystallization of amorphous Si:Sb alloy thin films

Carlsson

Järrendahl

et al. 1994

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inOn the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon Amorphous Si:Sb alloy thin films with various Sb concentrations were deposited on preoxidized Si substrates in an electron-beam evaporation system. The optical properties and the crystallization of the amorphous alloy as a function of Sb concentration were investigated with spectroscopic ellipsometry and x-ray diffraction (XRD), respectively. It has been found that the optical energy band gap decreases from 1.6 to 0.35 eV with increasing Sb concentration from 0 to 50 at. %, and that the index of refraction decreases overall with the increase of Sb concentration. From the crystallization study, it is seen that the crystallization temperature of the alloy decreases with increasing Sb concentration. From a detailed XRD examination, three different crystallization products from the amorphous alloys have been observed in low, medium, and high Sb concentration regions. The structure of the amorphous alloys and the correlation between the optical properties and the structures of the amorphous alloys are discussed. It is suggested that the amorphous alloys have differing favorable bonding structures, depending on the Sb concentration, that correspond to the bonding structures of the crystallization products.

show abstract

Silicon from microwave plasmas: Optical properties and their relation to structure

Cited by 4 publications

References 26 publications

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

Behavior of downstream plasmas generated in a microwave plasma chemical-vapor deposition reactor

Optical properties and crystallization of amorphous Si:Sb alloy thin films

Contact Info

Product

Resources

About

Silicon from microwave plasmas: Optical properties and their relation to structure

Cited by 4 publications

References 26 publications

Structural and optical properties of a‐SiOx:H thin films deposited by the GJ EBP CVD method

Structural and optical properties of a‐SiOx:H thin films deposited by the GJ EBP CVD method

Behavior of downstream plasmas generated in a microwave plasma chemical-vapor deposition reactor

Optical properties and crystallization of amorphous Si:Sb alloy thin films

Contact Info

Product

Resources

About

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method