Silicon-Integrated High-Speed Modulators Based on Barium Titanate with Record-Large Pockels Coefficients

Eltes, Felix; Ortmann, J. Elliott; Castera, Pau; Urbonas, Darius; Caimi, Daniele; Czornomaz, Lukas; Sanchís, Pablo; Fompeyrine, J.; Abel, Stefan

doi:10.1109/cleoe-eqec.2019.8872385

Cited by 3 publications

(3 citation statements)

References 8 publications

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“…These materials should preferably be compatible with backend-of-line (BEOL) integration to enable multilayer processing of a number of different materials. Such materials can be electro-optic polymers (EO-polymer) [74,75], lithium niobate (LiNbO 3 ) [76,77], barium titanate oxide (BTO) [78,79], electro-optic lead zirconate tantanate (PZT) [80], 2D materials such as graphene and transition metal dichalcogenides (TMDs) and transparent conducting oxides (TCOs) [81] (Figure 7). The review of the heterogeneous integration of materials enabling the formation of high-speed optical modulators is presented in the following sections.…”

Section: High-speed Modulators On the Silicon Nitride Platformmentioning

confidence: 99%

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

Gardes

Shooa

Paoli

et al. 2022

Sensors

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In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

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Section: High-speed Modulators On the Silicon Nitride Platformmentioning

confidence: 99%

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

Gardes

Shooa

Paoli

et al. 2022

Sensors

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“…Apart from efficiency and fast speed, these modulators suffer from increase insertion losses due to carriers or bandgap absorption and require a complex fabrication process involving high temperature required for doping activation or germanium epitaxy. Alternative concepts of optical modulator which are simpler in terms of fabrication and are compatible with back end of the line (BEOL) multi-layer processing are based on the integrations or bonding of other non CMOS active material such as, lithium niobite (LiNbO3) [6,7], barium titanate (BTO) [8,9], electro-optic PZT [10]. One of the simplest methods in terms of fabrication to achieve modulation by coating optical waveguiding components is to use electro-optic polymers (EO-polymer) [11,12].…”

Section: Introductionmentioning

confidence: 99%

Designs of Silicon Nitride Slot Waveguide Modulators With Electro-Optic Polymer and the Effect of Induced Charges in Si-Substrate on Their Performance

2021

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Dimensional parameters are optimized comparing stoichiometric and Si-rich silicon nitride-based push-pull modulators using a slot waveguide structure, electro-optic polymer cladding, and in-plane ground-signal-ground electrode. An optical power confinement in slot spacing is examined for choosing the optimal device parameters for wavelength of 1550nm. The electrical simulations are set to calculate an asymmetric spatial distribution of poling efficiency and modulating refractive index change in polymer. The influence of carrier charge in Si-substrate is also considered. The voltage-length products as well as the poling efficiency of Si-rich SiN are calculated as 1.47 V•cm and 0.74 respectively for a polymer with a , of 100 pm/V. For the selected polymer the calculated efficiency comparable to standard silicon based plasma dispersion depletion modulators. The efficiency can be increased more than two times for demonstrated polymers with a , of ~230. Low metal absorption loss of ~ 1dB/cm can be achieved from the optimal designed device. Comparing to the conventional simulation method without Si-substrate effect, a more accurate simulation method is also presented in this work.

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“…14 One focus of current research lies on the hybrid-integration of ferroelectric materials like barium titanate (BTO) into silicon-based photonic integrated circuits (PIC), 15 giving rise to an extraordinary Pockels effect. [16][17][18] We present an analysis of a horizontal slot waveguide configuration consisting of barium titanate (BTO) on silicon using a Ba 0.7 Sr 0.3 T iO 3 (BST) layer as template material. We propose the use of a vertical electrode configuration, which is formed by the doped silicon layer.…”

Section: Introductionmentioning

confidence: 99%

Analysis of BTO-on-Si-waveguides for energy-efficient electro-optical modulators

Steglich

Mai

2021

Integrated Optics: Design, Devices, Systems and Applications VI

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In this work, we analyze a horizontal slot waveguide configuration, which evaluates the potential for an integration of barium titanate (BTO) based modulators into a photonic integrated circuit (PIC) technology based on siliconon-insulator (SOI) wafer. The waveguide configuration consists of a doped crystal silicon layer, a Ba 0.7 Sr 0.3 T iO 3 (BST) template layer, a barium titanate (BTO) layer and a doped poly-silicon layer on top. In contrast to current approaches, we analyze the performance of this waveguide-structure by using a vertical electrode configuration that is formed by the doped silicon layer. In this way, the electric field strength is dramatically increased compared to current horizontal electrode configuration.

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Silicon-Integrated High-Speed Modulators Based on Barium Titanate with Record-Large Pockels Coefficients

Cited by 3 publications

References 8 publications

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

Designs of Silicon Nitride Slot Waveguide Modulators With Electro-Optic Polymer and the Effect of Induced Charges in Si-Substrate on Their Performance

Analysis of BTO-on-Si-waveguides for energy-efficient electro-optical modulators

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