Silicon monoxide pressures due to the reaction between solid silicon and silica

Kubaschewski, O.; Chart, T. G.

doi:10.1016/0021-9614(74)90008-1

Cited by 45 publications

(23 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(28)(29)(30) Thermochemical and thermophysical information on the molybdenum silicides has been summarized and evaluated in reviews. (1,2,31,32) In the following discussion, uncertainties correspond to twice the standard deviation of the mean.…”

Section: Discussionmentioning

confidence: 99%

Thermodynamic properties of silicides V. Fluorine-combustion calorimetric determination of the standard molar enthalpy of formation at the temperature 298.15 K of trimolybdenum monosilicide Mo3Si, and a critical assessment of its thermodynamic properties

Tomaszkiewicz

Hope

Beck

et al. 1996

The Journal of Chemical Thermodynamics

View full text Add to dashboard Cite

Section: Discussionmentioning

confidence: 99%

Thermodynamic properties of silicides V. Fluorine-combustion calorimetric determination of the standard molar enthalpy of formation at the temperature 298.15 K of trimolybdenum monosilicide Mo3Si, and a critical assessment of its thermodynamic properties

Tomaszkiewicz

Hope

Beck

et al. 1996

The Journal of Chemical Thermodynamics

View full text Add to dashboard Cite

“…(1) is used for the other gaseous species (O, O 3 , Si, Si 2 , Si 3 , SiO and SiO 2 ), the values are taken from the SGTE-Substance database which are reproduced with a proper conversion from the reference state atm to bar in [2]. We have included this as a conversion term ()0.10944 T) in our tabulated data of G 0;gas SiO ðT Þ at P ¼ 1 bar, and found this necessary to obtain a most close agreement with the best available experimental SiO-pressure data [78] in combination with our accepted Gibbs energies of (Si) and SiO 2 (cristobalite).…”

Section: Outline Of the Present Thermodynamic Modelingmentioning

confidence: 96%

“…The vapor pressure data (i) cannot be used. Very elaborate measurements of the equilibrium pressure of SiO over the mixture 1/2(Si + SiO 2 (cristobalite/quartz)), p SiþSiO 2 SiO ðT Þ, have been performed by Kubaschweski and Chart [78] in the temperature range 1270-1600 K. From their equation log 10 ðp SiþSiO 2 SiO Â 10 5 =barÞ ¼ 13:613 À 1:785 Â 10 4 =T , which is accepted here, we find that p am SiO [124] <p SiþSiO 2 SiO . This is in conflict with (iii) the observed metastability of SiO(am) and Eq.…”

Section: Sio(am) -Thermodynamic Modelingmentioning

confidence: 99%

Thermodynamics and phase stability in the Si–O system

Schnurre

Gröbner

Schmid–Fetzer

2004

Journal of Non-Crystalline Solids

137

View full text Add to dashboard Cite

“…In the first, the critical pressure of 02 is derived from an equality between the 02 How adsorbed by the silicon surface and the SiO IIow leaving the surface [9]. This approach has given a semiquantitative agreement with experimental results [6,10].…”

mentioning

confidence: 86%

Branching of Critical Conditions for Si(111)-(7×7) Oxidation

Shklyaev

Suzuki

1995

Phys. Rev. Lett.

View full text Add to dashboard Cite

From kinetic measurements by optical second harmonic generation of 02 interaction with Si(111)-(7 X 7) at temperatures between 610 and 735 'C and pressures from 10 9 to 10 6 tort, we determine the boundaries for oxide nucleation and for quasiequilibrium between surface phases of oxide and silicon. The distinction between these boundaries rejects the influence of the kinetic parameters of the surface reactions on the critical conditions. At T~700 C, the oxide nucleation requires oxygen pressure well above that required for oxide growth.The study of silicon oxidation near critical conditions has been advanced by recent investigations [1 -4]. The reactions of oxygen with silicon at high temperatures and low 02 pressures is characterized by two regimes: gas phase etching with volatile SiO formation [5] and oxide growth on the surface. The boundary between the regimes is referred to as the critical condition and is described in terms of the critical oxygen pressure (P,), which is a function of the surface temperature (T,), by the equation P, (T,) = Po exp( -AE/kT, ) [6,7]. The activation energy AE and the prefactor I'o were practically independent on the crystallographic orientation of the surface. These values are /s. E = 3.93 eV and Po = 4.4 X 10' torr for the Si(111) surface [7]. However, the critical conditions were shown to depend on the nature of the oxidant; in the case of the Si-N20 interaction, the critical conditions were shifted to much higher pressures and were described by significantly different parameters of AE = 2.14 eV and Po --1.5 X 10 torr [8].Two distinct approaches have been suggested for understanding the existence of critical conditions. In the first, the critical pressure of 02 is derived from an equality between the 02 How adsorbed by the silicon surface and the SiO IIow leaving the surface [9]. This approach has given a semiquantitative agreement with experimental results [6,10]. An alternative approach, referred to as a kinetic model, has been used to describe the critical conditions deriving from an equality between the growth and decay rates of Si02 clusters on the Si surface [7]. Recently, the initial stage of Si oxidation was considered to be a first-order phase transition [3]. An unexpected result obtained with scanning tunneling microscopy (STM) [2,4] and reliection high-energy electron diffraction [1] was the finding that the critical conditions were shifted compared with that expected by extrapolating high temperature data [7]. This shift Feltz, Memmert, and Behm [4] connected with the procedure of data acquisition; with decreasing pressures the times required to build up detectable amounts of surface oxide become much longer than the experimental waiting times at temperatures below 727 C. As a result, they detect clean Si surfaces even at experimental conditions where oxidation of the Si surface should have happened according to extrapolation of high temperature data [6,7].In this Letter we use the optical second harmonic generation (SHG) to monitor in situ the kinetics of Si(ill)-...

show abstract

Silicon monoxide pressures due to the reaction between solid silicon and silica

Cited by 45 publications

References 6 publications

Thermodynamic properties of silicides V. Fluorine-combustion calorimetric determination of the standard molar enthalpy of formation at the temperature 298.15 K of trimolybdenum monosilicide Mo3Si, and a critical assessment of its thermodynamic properties

Thermodynamic properties of silicides V. Fluorine-combustion calorimetric determination of the standard molar enthalpy of formation at the temperature 298.15 K of trimolybdenum monosilicide Mo3Si, and a critical assessment of its thermodynamic properties

Thermodynamics and phase stability in the Si–O system

Branching of Critical Conditions for Si(111)-(7×7) Oxidation

Contact Info

Product

Resources

About