Silicon tips are conventionally fabricated by isotropic etching followed by oxidation sharpening at temperatures below 1050 °C, based on the reduced oxidation rate at the step edge due to high compressive stress around the edge (Marcus and Sheng 1982). However, the effects of the oxidation temperature on the tip profile have been far from studied yet. This work investigated in detail the optimized oxidation temperature to fabricate sharp tips with high aspect ratio. The results indicated that a trade-off between aspect ratio and the tip diameter should be taken into account when choosing the oxidation temperature. Sharp silicon tip with a diameter of 6.3 nm was fabricated. Figure 1 described the fabrication process of the silicon tips. First, A 300 nm thick oxide was thermally grown on 4-inch (100) silicon wafer substrate as the mask. The lithography was performed to define the tip apex, and the pattern was transferred to the thermal oxide by reactive ion etching (RIE). Then silicon etching was followed by isotropic dry etching using RIE to get the silicon posts. After isotropically etching Si to a depth of 6 um, a neck was formed about 1 micron below the mask, located at the thinnest part of the silicon post, as illustrated in Fig. 1d. Silicon necks with widths between 97 and 330 nm were produced by changing the mask sizes. The oxide mask was removed by buffered hydrofluoric (BHF) acid solution and the silicon posts or "pre-tips" were formed. Figure 3a-c shows the SEM photographs of the fabricated silicon posts.
Experimental arrangementsFour groups of silicon post samples were prepared and thermal oxidation were performed at temperatures of 900, 950, 1000, and 1050 °C, respectively. Low temperature oxidation has been studied to sharpen silicon tips (Umimoto Abstract Thermal oxidation at low temperatures (below 1050 °C) is widely used in the microfabrication of sharp silicon tips. However, the influences of the oxidation temperature on morphology of the tips have not been investigated in detail. This work systematically studied the dependence of tip profile on the oxidation temperature. Thermal oxidation were performed in four groups at 900, 950, 1000 and 1050 °C. The results show that a trade-off between the tip aspect ratio and diameter should be taken into account when choosing the oxidation temperature. The optimized oxidation temperature to make tips with small apex, high aspect ratio, and smooth surface is around 1000 °C. The tip with a diameter of 6.3 nm was realized through oxidation at 1000 °C.