2005
DOI: 10.1016/s1369-7021(04)00678-9
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Silicon optical modulators

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Cited by 417 publications
(503 citation statements)
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“…In our Fano optomechanical system, the forward transmission contrast of the Fano response is as high as approximately 54% [see Fig. 3(d)], which is sufficient for any telecom system70. Correspondingly, the peak of the Fano resonance in the normalized power backward reflection T B is increased due to the energy conservation.…”
Section: Resultsmentioning
confidence: 88%
“…In our Fano optomechanical system, the forward transmission contrast of the Fano response is as high as approximately 54% [see Fig. 3(d)], which is sufficient for any telecom system70. Correspondingly, the peak of the Fano resonance in the normalized power backward reflection T B is increased due to the energy conservation.…”
Section: Resultsmentioning
confidence: 88%
“…Among photonic technologies, optical modulation is one of the most essential operations, which offers intrinsic advantages of higher bandwidth and lower loss1. Therefore, substantial research efforts are being directed towards optical modulation to exploit compact, cost-effective, efficient, fast and broadband light modulators for high-performance optical interconnects2.…”
mentioning
confidence: 99%
“…On the contrary, rare-earth (RE) ions doped glass ceramics (GCs) can overcome these drawbacks. Besides, the well-engineered RE-doped GCs, combining the merits of glass (low expense, easy fabrication, good homogeneity and optical transparency) and crystals (high chemical durability and mechanical strength, intense crystal field effect)17181920, can be effortless for fiber drawing and will greatly impact the application in future all-optical fiber telecommunication22122. As is known to all, photons interact weakly with each other, which requires the mediation of a physical system to produce efficient photon-photon interactions16232425.…”
mentioning
confidence: 99%
“…Since the magnitude of the response d should scale with both the optical interaction length and the magnitude of the applied AC field, we compare the field-and thickness-normalized optical rotation d 0 = d/(E AC Át), where t is the thickness of the BTO layer. The thickness of the STO and Si layers are not included, as no Pockels effect is expected for materials with inversion symmetry [14].…”
Section: Methodsmentioning
confidence: 99%