2004
DOI: 10.1007/978-3-540-39913-1_7
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Silicon Photo-Receivers

Abstract: Abstract. The properties of photodiodes being exploitable in standard bipolar, CMOS, and BiCMOS technologies are summarized. In addition examples of advanced photodiodes will be introduced in order to show how the properties of integrated photodiodes can be improved significantly by minor process modifications. Furthermore, examples of optoelectronic integrated circuits (OEICs) for such important applications like optical storage systems and optical fiber receivers are described. New trends for the circuit top… Show more

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Cited by 8 publications
(4 citation statements)
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“…De acordo com Zimmermann and Fitzsimmons (2004), o crescimento do cultivo intensivo causou uma dependência por rações balanceadas e nutricionalmente completas. Além disso, a alimentação na piscicultura tem sido amplamente discutida, principalmente por representarem cerca de 70% dos custos, dependendo do sistema de cultivo empregado, da escala de produção, da produtividade alcançada, dos preços e insumos, dentre outros fatores (Kubitza, 2009).…”
Section: Pubvetunclassified
“…De acordo com Zimmermann and Fitzsimmons (2004), o crescimento do cultivo intensivo causou uma dependência por rações balanceadas e nutricionalmente completas. Além disso, a alimentação na piscicultura tem sido amplamente discutida, principalmente por representarem cerca de 70% dos custos, dependendo do sistema de cultivo empregado, da escala de produção, da produtividade alcançada, dos preços e insumos, dentre outros fatores (Kubitza, 2009).…”
Section: Pubvetunclassified
“…Additionally, they are used in conjunction with scintillators, and are widely used as x-ray detectors applied in medical tomography equipment and airport luggage scanners. One of the most important advantages of silicon is that, due to the quality of its crystalline material and its excellent passivation properties, very low dark-current PD devices can be obtained [14]. …”
Section: Introductionmentioning
confidence: 99%
“…Silicon photodetectors have already found wide acceptance for visible light (0.400-0.700 µm) applications [1], while for applications in optical communications in the near-IR wavelength range between 800 and 900 nm they suffer from low bandwidth-efficiency products due to the long absorption length necessitated by the small absorption coefficient. In silicon (Si), considering the interband transition, a cut-off wavelength of about 1.1 µm is obtained; therefore, in order to obtain a photodetector working at 1.3-1.55 µm fibre optic communication wavelength range, we have two possible options.…”
Section: Introductionmentioning
confidence: 99%