Silicon photodiodes with high photoconductive gain at room temperature

Li, X.; Carey, James E.; Sickler, Jason W.; Pralle, Martin U.; Palsule, C.; Vineis, C.J.

doi:10.1364/oe.20.005518

Cited by 36 publications

(29 citation statements)

References 11 publications

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“…A comparison can be made with Si photodiodes fabricated by Li et al 54 using high quality float zone Si substrates. The typical rise and fall times of 0.55 and 0.3 ms were obtained in this device, respectively.…”

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confidence: 99%

Silicon nanowire network metal-semiconductor-metal photodetectors

Mulazimoglu

Coşkun

Günöven

et al. 2013

Applied Physics Letters

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Cataloged from PDF version of article.We report on the fabrication and characterization of solution-processed, highly flexible, silicon nanowire network based metal-semiconductor-metal photodetectors. Both the active part of the device and the electrodes are made of nanowire networks that provide both flexibility and transparency. Fabricated photodetectors showed a fast dynamic response, 0.43 ms for the rise and 0.58 ms for the fall-time, with a decent on/off ratio of 20. The effect of nanowire-density on transmittance and light on/off behavior were both investigated. Flexible photodetectors, on the other hand, were fabricated on polyethyleneterephthalate substrates and showed similar photodetector characteristics upon bending down to a radius of 1 cm. © 2013 AIP Publishing LLC

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confidence: 99%

Silicon nanowire network metal-semiconductor-metal photodetectors

Mulazimoglu

Coşkun

Günöven

et al. 2013

Applied Physics Letters

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“…In comparison with the commercial Si and Ge photodetectors (the solid lines in Figure ) at −12 V, approximately three orders of magnitude higher responsivity was achieved at the comparable bias. Furthermore, the responsivity for the b‐Si photodetector was over 10 times higher than that of previously reported results of b‐Si photodetectors . The two insets in Figure show the highest response and infrared photoresponse against the reverse bias, respectively.…”

Section: Resultsmentioning

confidence: 91%

“…By considering the dark current as the major noise, the specific detectivity ( D *) of the photodetector can be calculated as

D^{*} = \frac{A^{1 / 2} R}{{(2 e I_{dark})}^{1 / 2}}

where A is the device working area, R is the responsivity, e is the electron charge constant, and I dark is the dark current. At −5 V bias, the specific detectivity showed a value of 1.22 × 10 14 Jones (1 Jones = 1 cm Hz 1/2 W −1 ) at 1080 nm at room temperature, indicating a much higher sensitivity of photon detection than the commercial silicon photodetector and previously reported results . Based on the low dark current and the large difference between the dark current and photocurrent, b‐Si photodetectors exhibit great potential in detection, with a high photon sensitivity and responsivity.…”

Section: Resultsmentioning

confidence: 99%

“…As aforementioned, an extremely high EQE of 57 200% was observed at −5 V, which is unlikely to be due to avalanche gain considering the low bias voltages, as shown in Figure . For such a unique n + –i heterojunction, this mechanism is more likely to be a special photoconductive gain, which originates from a discrepancy between the recombination lifetime and the transit time of carriers . Due to the low density of impurity defects and free carriers in the intrinsic layer, the recombination was largely inhibited.…”

Section: Resultsmentioning

confidence: 99%

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Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Huang

Jia

et al. 2020

Advanced Optical Materials

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Silicon‐based photodetectors show attractive prospects due to their convenient preparation, high detectivity, and complementary metal–oxide–semiconductor compatibility. However, they are currently limited by low responsivity and sharp decay at sub‐bandgap wavelength. Although the aforementioned limitation can be partly solved by femtosecond laser processing, the surface defects and carrier activation rates result in a large dark current and narrow spectral response, which are unsatisfactory. Herein, rapid thermal annealing and hydrogenated surface passivation are introduced to elevate the broad‐bandgap responsivity and signal to noise ratio and to suppress the dark current. At optimal conditions, a sub‐bandgap responsivity of 0.80 A W−1 for 1550 nm at 20 V at room temperature is obtained, comparable with commercial germanium photodiodes and much higher than previously reported silicon photodiodes. Moreover, the prepared photodetector responded to spectral range from 400 to 1600 nm, with responsivity reaching 1097.60 A W−1 for 1080 nm at 20 V, which is the highest in reported silicon photodetectors. Simultaneously, the device shows competitive detectivity (1.22 × 1014 Jones at −5 V) due to the post‐processing procedures and suppressed dark current (7.8 μA at −5 V). The results show great prospects for black silicon in infrared light detection, night vision imaging, and fiber‐optic communication.

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“…hyperdoping in silicon has been recognized to be a potential for the fabrication of silicon‐based photodetectors . It has been reported that the chalcogen hyperdoped silicon photodetector can exhibit a high photoconductive gain under illumination while preserve a diode‐rectifying effect in the dark . This provides a novel path to the silicon‐based photoconductors with a low noise and a high detect sensitivity.…”

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confidence: 99%

Trap Assisted Bulk Silicon Photodetector with High Photoconductive Gain, Low Noise, and Fast Response by Ag Hyperdoping

Qiu

Yuan

et al. 2017

Advanced Optical Materials

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suffer from high cost, complementary metal-oxide-semiconductor (CMOS) incompatibility, and not being environment friendly. Design and fabrication of a low-cost and CMOS-compatible siliconbased photoconductor is always urgent for current and future optoelectronics application. Unfortunately, silicon-based photoconductors usually exhibit a certain degree of latency in the photocurrent fluctuation when light is on or off, usually around 1-10 ms. [13][14][15] Meanwhile, they also suffer from a very large dark current, due to the extrinsic charge injection under reverse bias voltage, which causes the shot noise, weakens the detection sensitivity, and increases the power wastage. [12,16] Recently, the chalcogen (S, Se, and Te) and some transition metals (Au, Ti, etc.) hyperdoping in silicon has been recognized to be a potential for the fabrication of silicon-based photodetectors. [3,4,[17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] It has been reported that the chalcogen hyperdoped silicon photodetector can exhibit a high photoconductive gain under illumination while preserve a diode-rectifying effect in the dark. [24][25][26][29][30][31] This provides a novel path to the silicon-based photoconductors with a low noise and a high detect sensitivity. It was reported that the charge carrier trap states may play an essential role in the enhanced photoresponse. [24] However, this phenomenon has not yet been reported in the transition metal hyperdoped silicon photodetectors, and the related mechanism and its operating principle for this type of silicon photoconductors are still open for question. Meanwhile, theoretical calculations suggest that chalcogen dopant hyperdoping in silicon is not the best choice for the fabrication of photoconductors. [32,33] The silver (Ag) hyperdoping in silicon has a relatively higher optical figure of merit (v, defined by the ratio of carrier lifetime to transmit time), which is expected to have stronger potential in the optoelectronic application. [32,33] However, this interestingly theoretical prediction is still lack of the verification of related experiments.Here, we report a highly sensitive and room-temperature operated bulk silicon photodetector based on Ag hyperdoped silicon (Si:Ag). The Si:Ag samples were prepared by thermal evaporation deposition of Ag films and subsequent femtosecond pulsed laser melting (fs-PLM). A large density of Silicon-based photoconductors, with their low cost, high sensitivity, and complementary metal-oxide-semiconductor (CMOS) compatibility, have great potential for high-resolution imaging, light-activated switching, and singlephoton counting. However, they usually suffer from a large dark leakage current and a long response time, which greatly limits their applications. Here, a highperformance bulk silicon photodetector is fabricated working at room temperature with a broad spectral response range from 300 to 1200 nm through silver (Ag) hyperdoping. The detector shows a low dark current of 3.8 × 10 −7 A cm −2 and a high external quantum efficie...

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Silicon photodiodes with high photoconductive gain at room temperature

Cited by 36 publications

References 11 publications

Silicon nanowire network metal-semiconductor-metal photodetectors

Silicon nanowire network metal-semiconductor-metal photodetectors

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Trap Assisted Bulk Silicon Photodetector with High Photoconductive Gain, Low Noise, and Fast Response by Ag Hyperdoping

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