Silicon photonic modulators for PAM transmissions

Shi, Wei; Xu, Yin; Sepehrian, Hassan; LaRochelle, Sophie; Rusch, Leslie A.

doi:10.1088/2040-8986/aacd65

Cited by 45 publications

(26 citation statements)

References 108 publications

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“…The SLOW50 configuration has higher resistance and lower capacitance compared to the SLOW150 configuration, the first effect dominates and leads to a smaller cut-off frequency. The SLOW150 configuration can reach f 3dB > 12.5 GHz, which can sustain a bit rate up to 25 Gbps with non-return to zero format, or even up to 50 Gbps with PAM-4 encoding [48]. The corresponding rates for the SLOW50 configuration are about a factor of two smaller.…”

Section: Configurationmentioning

confidence: 99%

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

et al. 2019

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Slow light is a very important concept in nanophotonics, especially in the context of photonic crystals. In this work, we apply our previous design of band-edge slow light in silicon waveguide gratings [M. Passoni et al, Opt. Express 26, 8470 (2018)] to Mach-Zehnder modulators based on the plasma dispersion effect. The key idea is to employ an interleaved p-n junction with the same periodicity as the grating, in order to achieve optimal matching between the electromagnetic field profile and the depletion regions of the p-n junction. The resulting modulation efficiency is strongly improved as compared to common modulators based on normal rib waveguides, even in a bandwidth of 20-30 nm near the band edge, while the total insertion loss due to free carriers is not increased. The present concept is promising in view of realizing slow-light modulators for silicon photonics with reduced energy dissipation.

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Section: Configurationmentioning

confidence: 99%

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

et al. 2019

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“…HE growing demand for ultra-fast optical links has created intense interest in low-cost, integrated transceivers. This is one of the major driving forces for research in silicon photonics (SiP) [1,2]. Silicon has numerous advantages over other platforms (e.g., LiNbO3 and InP), such as its compatibility with the CMOS fabrication process and the ability to manipulate polarization on a chip.…”

Section: Introductionmentioning

confidence: 99%

“…Despite recent demonstrations in higher-order modulation formats, with direct detection [2][3][4][5][6] or coherent detection [7][8][9][10], there exists a gap between optimization efforts in the design of SiP modulators and in the system-level performance. A joint optimization, of both modulator design and system parameters, could further push performance.…”

Section: Introductionmentioning

confidence: 99%

“…A joint optimization, of both modulator design and system parameters, could further push performance. Most of the previously reported works [2] focused on maximizing the electro-optic bandwidth of the modulator (BWE-O) or on increasing the modulation efficiency by lowering modulator Vπ (to make it more compatible with small-swing CMOS drivers).…”

Section: Introductionmentioning

confidence: 99%

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Silicon Photonic IQ Modulators for 400 Gb/s and Beyond

Sepehrian

Lin

Rusch

et al. 2019

J. Lightwave Technol.

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Silicon photonics has enormous potential for ultrahigh-capacity coherent optical transceivers. We demonstrate an IQ modulator using silicon photonic traveling-wave modulators optimized for higher-order quadrature amplitude modulation (QAM). Its optical and RF characteristics are studied thoroughly in simulation and experiment. We propose a system-orientated approach to optimization of the silicon photonic IQ modulator, which minimizes modulator-induced power penalty in a QAM transmission link. We examine the trade-off between modulation efficiency and bandwidth for the optimal combination of modulator length and bias voltage to maximize the clear distance between adjacent constellation points. This optimum depends on baud rate and modulation format, as well as achievable driving voltage swing. Measured results confirm our prediction using the proposed methodology. Without pre-compensating bandwidth limitation of the modulator, net data rates up to 232 Gb/s (70 Gbaud 16-QAM) on single polarization are captured, indicating great potential for 400+ Gb/s dual-polarization transmission.

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“…SSB-OFDM modulation can be realized by directly filtering the undesired sideband [3], but requires sharp filters with well controlled center frequency to isolate one sideband precisely. External modulators [4] Silicon photonics (SiP) is a CMOS-compatible technology based on high-index-contrast waveguides, that can be used for high-speed optical modulators [5]. Compared to MZMs, microring modulators (MRMs) [6] have the advantage of ultrasmall footprint and low power consumption (down to fJ/bit), both superb attributes for short-reach applications.…”

Section: Introductionmentioning

confidence: 99%

Single-Sideband OFDM Transmission via a Silicon Microring IQ Modulator

Lyu

Rusch

et al. 2019

IEEE Photon. Technol. Lett.

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We experimentally demonstrate the generation of a single-sideband orthogonal frequency division multiplexed (OFDM) signal using an on-chip silicon photonics microringbased IQ modulator. Over 18 dB sideband suppression ratio is achieved for the wideband OFDM: 15.7 GHz data band and 2.7 GHz guard band. The 31.4 Gb/s signal was transmitted over 20 km of standard single-mode fiber with a bit error rate below the forward error correction threshold. While single-sideband continuous-wave signals have been produced with such hardware, this is the first demonstration of stable data transmission on the single sideband carrier.

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Silicon photonic modulators for PAM transmissions

Cited by 45 publications

References 108 publications

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

Silicon Photonic IQ Modulators for 400 Gb/s and Beyond

Single-Sideband OFDM Transmission via a Silicon Microring IQ Modulator

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