Silicon Quantum Photonics

Silverstone, Joshua W.; Bonneau, Damien; O’Brien, Jeremy L; Thompson, Mark G.

doi:10.1109/jstqe.2016.2573218

Cited by 270 publications

(195 citation statements)

References 171 publications

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“…Fast and efficient single-photon detectors represent one of the fundamental building blocks for the realization of on-chip quantum photonic circuits 1 . Superconducting nanowire single-photon detectors 2 (SNSPDs) are the most promising detection devices for telecommunication wavelengths.…”

Section: Introductionmentioning

confidence: 99%

On-chip coherent detection with quantum limited sensitivity

Kovalyuk

Ferrari

Kahl

et al. 2017

Sci Rep

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While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon’s frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/∆f exceeding 1011. By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously.

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Section: Introductionmentioning

confidence: 99%

On-chip coherent detection with quantum limited sensitivity

Kovalyuk

Ferrari

Kahl

et al. 2017

Sci Rep

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“…It has a large refractive index that enables many photonic components to fit into a small device size. [15][16][17] Electrical contacts incorporated into the photonic structure can rapidly modulate and reconfigure these components by free-carrier injection on fast timescales. 18,19 Silicon is also compatible with standard CMOS fabrication methods that can combine electronics with photonics on a large scale.…”

mentioning

confidence: 99%

“…18,19 Silicon is also compatible with standard CMOS fabrication methods that can combine electronics with photonics on a large scale. 15,16 For these reasons, silicon photonics can achieve the most complex integrated photonic structures to date composed of thousands of optical components in a single chip. 20,21 However, since silicon is also an indirect bandgap material with poor optical emission properties, it has not been possible to integrate efficient atom-like quantum emitters.…”

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confidence: 99%

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip

et al. 2017

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Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pickand-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision.We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of pre-characterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.Photonic quantum information processors use multiple interacting photons to implement quantum computors, 1,2 simulators, 3,4 and networks. [5][6][7][8] These applications require efficient single photon sources coupled to photonic circuits that implement qubit interactions to create highly connected multi-qubit systems. [8][9][10][11] Scalable photonic quantum information processors require methods to integrate single photon sources with compact photonic devices that can combine many optical components. Such integration could enable complex quantum information processors in a compact solid-state material. [12][13][14] Silicon has many advantages as a material for integrated quantum photonic devices. It has a large refractive index that enables many photonic components to fit into a small device size. [15][16][17] Electrical contacts incorporated into the photonic structure can rapidly modulate and reconfigure

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“…Over the last years the prospects of monolithically integrated optical interconnects 1 as well as on-chip sensing systems 2,3 and quantum optical platforms 4,5 have triggered the development of Si-based optical components 6−12 and sources based on group-IV emitters 13−18 or hybrid integration of III–V materials. 4,19−22 Despite the progress of direct epitaxial growth of III–V semiconductors on Si, 20−22 group-IV quantum dots (QDs) distinguish themselves as particularly promising candidates for the next generation of sources for Si integrated quantum optical applications.…”

mentioning

confidence: 99%

Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities

et al. 2017

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Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic platforms. We report on strongly enhanced emission from single Ge QDs into L3 photonic crystal resonator (PCR) modes based on precise positioning of these dots at the maximum of the respective mode field energy density. Perfect site control of Ge QDs grown on prepatterned silicon-on-insulator substrates was exploited to fabricate in one processing run almost 300 PCRs containing single QDs in systematically varying positions within the cavities. Extensive photoluminescence studies on this cavity chip enable a direct evaluation of the position-dependent coupling efficiency between single dots and selected cavity modes. The experimental results demonstrate the great potential of the approach allowing CMOS-compatible parallel fabrication of arrays of spatially matched dot/cavity systems for group-IV-based data transfer or quantum optical systems in the telecom regime.

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Silicon Quantum Photonics

Cited by 270 publications

References 171 publications

On-chip coherent detection with quantum limited sensitivity

On-chip coherent detection with quantum limited sensitivity

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip

Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities

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