Silicon Schottky Barrier Monolithic IRTV Focal Planes

Shepherd, Freeman D.; Yang, A.; Roosild, S.; Bloom, J.H.; Capone, B.; Ludington, C. E.; Taylor, Richard W.

doi:10.1016/s0065-2539(08)61587-5

Cited by 12 publications

(4 citation statements)

References 4 publications

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“…The spectral response of the camera is determined by conservation of perpendicular momentum as hot carriers pass over the Schottky barrier during the internal emission process. The spectral response is given by: (1) where Y is the quantum yeild, Cl a material dependent coefficient and hv the photon energy.…”

Section: Silicide Internal Photoemission Camera Operationmentioning

confidence: 99%

<title>Silicide Infrared Camera Technology</title>

Shepherd

1983

SPIE Proceedings

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In recent years there have been rapid advances in infrared television cameras based upon metal -silicide focal plane arrays. These devices sense infrared via internal photoemission of hot carriers a process that is analogous to vacuum photoemission. Internal photoemission is very reproducible and large arrays with cell to cell photoresponse uniformity better than 0.5% rms have been demonstrated.This uniformity has been exploited in the design of simplified cameras which require minimal pixel compensation. Projected applications of these cameras include medical diagnostics, reliability studies and infrared astronomy. The present paper will describe the development of the silicide camera technology, outline the physics of camera operation and demonstrate preliminary imagery in astronomy and thermal diagnostics.

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Section: Silicide Internal Photoemission Camera Operationmentioning

confidence: 99%

<title>Silicide Infrared Camera Technology</title>

Shepherd

1983

SPIE Proceedings

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“…The quantum yield can be measured by observing the resultant video signal genera ed by a single diode on an A -scope as a function of illumination wavelength. The yield is V C Y = s g eG Wa2sAd (2) Where Vs is the output signal in volts, C is the capacitance of the output amplifier, e is the electronic charge, G is _he gain of the output amplifier, W is the source irradiance in the bandwidth of interest, a is the peak wavelength of the narrow band (< 0.5 um) filter, Ts is the stare time, and Ad is the device (pixel) area.…”

Section: Quantum Yieldmentioning

confidence: 99%

<title>TV-Compatible Schottky Barrier Monolithic IRCCD Focal Plane</title>

et al. 1979

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We describe the construction, operation, and performance of a staring IRCCD focal plane that utilizes platinum silicide Schottky barrier diodes on p -type silicon as the infrared detector.The 25X50 element array is fabricated with standard integrated circuit grade silicon and uses an interline transfer scheme consisting of 25 vertical column buried channel CCD shift registers and one horizontal shift register.The device is operated at a temperature of about 80 °K and is sensitive in the 1.2 to 4.5 um spectral region. A signal processor is also described which provides a non -interlace television compatible video signal from the IRCCD and interfaces with the normal drive electronics. The processor provides phase locked clocks and digitally derived control pulses for accurately synchronized signals to insure excellent video stability.Central to the design of this processor is a slow in /fast out CTD time compressor which allows the video signal to be displayed as a normal full field picture on a standard television monitor. We discuss the operation and characterization of the Schottky IRCCD imager including measurements of bias dependence of the transfer characteristic and device quantum yield. In addition, data are presented on thermal response, integration element size, transfer efficiency, MRT and noise characteristics.Future improvements in Schottky IRCCD technology are discussed.

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“…The uniformity with which the contact holes can be defined and etched will clearly affect the uniformity of response. However, work at Air Force Cambridge Research Laboratories suggests that this will not be a problem [8].…”

Section: E Operation Of the Ccd With Electrical Inputmentioning

confidence: 99%

Charge-Coupled Scanned IR Imaging Sensors

Kohn¹

1975

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B. Schottky-Barrier Response and Dark Current C. Shift-Register Design and Mask Layout D. Device Fabrication E. Opention of the CCD with Electrical Input F. Visible Light Imaging G. Testing of Schottky-Barrier Detectors on CCD Chips H. Detection of Infrared Images in the Vidicon Mode I. Device Uniformity J. Operation in the Background Suppression (Skimming) Mode ... 46 III. CONCLUSIONS 48 REFERENCES 49

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Silicon Schottky Barrier Monolithic IRTV Focal Planes

Cited by 12 publications

References 4 publications

<title>Silicide Infrared Camera Technology</title>

<title>Silicide Infrared Camera Technology</title>

<title>TV-Compatible Schottky Barrier Monolithic IRCCD Focal Plane</title>

Charge-Coupled Scanned IR Imaging Sensors

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