Silicon tetrachloride conversion in microwave discharge hydrogen plasma

Abstract

Silicon tetrachloride conversion in microwave discharge hydrogen plasma has been experimen tally investigated. The main products of this process are silicon, hexachlorodisilane, and polychlorosilanes. The proportions of the products depend on specific energy input and on the place in which the reactants (SiCl 4 and H 2 ) are introduced into the plasma discharge zone. The conditions ensuring a 90% silicon yield have been determined. The gas dynamic and heat transfer processes in a cylindrical reactor have been numer ically simulated for these conditions. The temperature interval in the discharge zone (2000-2500 K) and the rate of quenching of products (silicon containing radicals) have been estimated. Experimental data of this study and their comparison with data available from the literature suggest a hypothesis concerning the reac tions responsible for the formation of silicon, hexachlorodisilane, and polychlorosilanes.