Simulation and analysis of a Single Mode Indium Gallium Arsenide Phosphide Vertical Cavity Surface Emitting Laser for Optical Communication

Abstract

This present work is about simulating and analysing a Vertical Cavity Surface Emitting Laser (VCSEL) structure used in optical fibre communication systems. In this paper a VCSEL structure made of seven Quantum Wells of Indium Gallium Arsenide Phosphide (InGaAsP) emitting at 1550 nm is simulated. The device is analysed looking at the following characteristics: Direct current current and voltage (IV) characteristics, light power against electrical bias, optical gain against electrical bias, light distribution over the structure, output power and threshold current. Specification of material characteristics, ordinary physical models settings, initial VCSEL biasing, mesh declarations, declaration of laser physical models, their optical and electrical parameters were defined using Atlas syntax. Mirror ratings and quantum wells are the two main parameters that were studied and analysed to come up with structure trends. By determining important device parameters such as proper selection of the emission wavelength and choice of material; a VCSEL with an output power of 9.5 mW was simulated and compared with other structures.

High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection

“…RCE PD features strong wavelength selectivity with a high reflectivity of mirrors. To clarify the reason why the reflectivity of the SiO 2 /Si DBR mirror is high, we calculated the DBR mirror reflectivity using the following equation where R is the mirror reflectivity, n L is the low refractive index, n H is the high refractive index, N is the number of periods, and 2 N is the number of deposited layers for a particular mirror. In our case, refractive indexes and calculated mirror reflectivity at 1310 and 1550 nm are summarized in Table .…”