Simulation of CVD Process by Boundary Integral Technique

Oh, Hyun Jung; Rhee, Shi Woo; Kang, In Seok

doi:10.1149/1.2069482

Cited by 20 publications

(17 citation statements)

References 15 publications

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“…The model presented in this work does not include any information regarding facets, crystal orientation or defects such as twins or dislocations. Before a numerical solution is presented, a linear stability analysis is performed, based on the work of Oh et al [7], in order to quantify the growth rate limits beyond which planar deposition is not possible, as well as to identify the influence of the system parameters on the stability limits. The numerical model, presented after the stability analysis, is based on continl;um species conservation equations, and coupled to surface reaction kinetics.…”

Section: Introductionmentioning

confidence: 99%

“…Work has been performed to derive analytical solutions using linear stability analysis to study the: (1) morphological stability of a deposition layer during CVD [7,22,23]; and (2) stability of the shape of a phase boundary enclosing a solidification front during solidification processes [24,25]. The stability analysis has demonstrated its own significance by providing useful information on anorphology control in many practical CVD and solidification processes.…”

Section: Introductionmentioning

confidence: 99%

“…Oh et al [7] have carried out a stability analysis to examine the behavior of small disturbances imposed on a flat interface during the growth of a deposition layer in a CVD process. The deposition layer is said to be morphologically unstable if the imposed disturbance is amplified with time and to be morphologically stable if it is damped out with the passage of time.…”

Section: Introductionmentioning

confidence: 99%

“…The derived expression suggests that surface migration/diffusion plays a stabilizing role in controlling the morphology of films, whereas gas-phase diffusion has a destabilizing effect in a mass-transfer limited regime. In the present work, the linear stability analysis results derived by Oh et al [7] will be used to analyze the t%ctors responsible for controlling diamond film morphoilogy.…”

Section: Introductionmentioning

confidence: 99%

“…The general results of linear stability analysis applied to a CVD process obtained by Oh et al [7] are utilized in this work to determine the e&t of diamond CVD reactor conditions on stability. The stability analysis is performed utilizing the governing Eq.…”

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confidence: 99%

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Simulation of morphological instabilities during diamond chemical vapor deposition

Mahalingam

Dandy

1997

Diamond and Related Materials

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The diamond chemical vapor deposition (CVD) process has been investigated theoretically and the morphological instabilities associated with the growth of diamond films have been examined with a model based on the continuum species conservation equation coupled to surface reaction kinetics. A linear stability analysis and numerical calculations have been carried out to determine critical parameters affecting the diamond deposition layer morphology. A two-dimensional model describes the evolution of the gas-solid interface. The dynamic behavior of the interface depends on the reactants' diffusivity and surface kinetics. These factors depend upon the reactant material properties and film growth conditions such as the reactor temperature and pressure. From the analyses, it has been found that the ratio (2/k) of gas phase diffusivity (9) to the surface reaction rate constant (k) plays the critical role in promoting diamond morphological instabilities because the film morphology stabilizing processes of surface diffusion and re-evaporation are absent or negligible during diamond CVD. It is found that the film nonuniformity increases as the ratio (2/k) decreases. Increasing growth rates also result in increasing morphological instability. leading to rough surfaces. It is shown that increasing reactor pressure and decreasing gas-phase temperature and/or substrate temperature promote deposition layer nonuniformity.An approach to avoiding these instabilities is proposed. 0 1997 Elsevier Science S.A.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Simulation of morphological instabilities during diamond chemical vapor deposition

Mahalingam

Dandy

1997

Diamond and Related Materials

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Analysis of interface evolution and pattern formation during CVD

Thiart

Hlaváček

1995

AIChE Journal

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A Simple Index to Restrain Abnormal Protrusions in Films Fabricated Using CVD under Diffusion‐Limited Conditions

Kajikawa

Noda

Komiyama

2004

Chemical Vapor Deposition

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Cauliflower-like protrusions formed in CVD processes under diffusion-limited conditions have been studied both experimentally and theoretically. Both approaches indicate that the difference in diffusion fluxes to the film and to the protrusions controls the growth of such protrusions. However, direct comparisons of these two approaches have never been done, probably due to the complexity of the theoretical models. To simplify model protrusion growth, we developed a one-dimensional (1D) analytical model by hypothesizing the diffusion of growth species in the boundary layer above a growing film. Based on this model, we propose a non-dimensional quantity, k s f/D, as an index of protrusion growth (D is the diffusion coefficient of the growth species, k s is the surface reaction-rate coefficient, and f is film thickness). This index represents more directly the protrusion growth than does the previously proposed index, the Damköhler number, Da = k s d/D, where d is boundary layer thickness. To obtain smooth, protrusion-free films, D/k s should be kept larger than the desired film thickness. By controlling the process conditions to satisfy this index, we successfully fabricated protrusion-free films with SiC deposition from dichlorodimethylsilane (DDS).

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Simulation of CVD Process by Boundary Integral Technique

Cited by 20 publications

References 15 publications

Simulation of morphological instabilities during diamond chemical vapor deposition

Simulation of morphological instabilities during diamond chemical vapor deposition

Analysis of interface evolution and pattern formation during CVD

A Simple Index to Restrain Abnormal Protrusions in Films Fabricated Using CVD under Diffusion‐Limited Conditions

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