Simulation of the pressure distribution in the melt for sapphire ribbon growth by the Stepanov (EFG) technique

Development of a start-to-finish automation system for shaped sapphire crystals growth

“…[3,5], in which the significant impact of the hydrostatic pressure and the melt hydrodynamics on sensor readings was shown for the first time. Such impact has been experimentally confirmed in Ref.…”

“…The former is stipulated by the hydrostatic pressure which exists due to the presence of the distance between the die top and the melt pool and the second by the fact that crystal pulling itself originates melt flow in the thin meniscus and the capillary and, therefore, an additional force is needed [2,3].…”

The effect of the pressure difference across the free surface on the static meniscus shape in the case of ribbon growth by edge-defined film-fed growth (E.F.G.) method

“…Sapphire single-crystal ribbon growth for optical windows without birefrigerence and substrate for nitride epitaxy were reported in Refs. [28][29][30][31][32][33][34][35][36][37][38]. Bi-based superconducting ribbon growth, GaSb ribbon growth for thermo photovoltaic devices and substrate for long wavelength detectors and lasers were reported in Refs.…”

“…The authors of papers [45,46] consider automated crystal growth processes based on weight sensors and computers. They give an expression for the weight of the meniscus contacted with crystal and shaper of arbitrary shape, in which there are terms related to the hydrodynamic pressure.…”

“…[47] Rosolenko shows that the hydrodynamic pressure is too small to be considered in the automated crystal growth and it is not clear what equation (of non Laplace type) was considered in Refs. [45,46] for the meniscus free surface. In Ref.…”