2013
DOI: 10.1080/00150193.2013.839240
|View full text |Cite
|
Sign up to set email alerts
|

Simulation of the Transient Current of NiO Resistive Memory during the Switching Process by Using RC Circuit

Abstract: A Pt/NiO/Pt device was fabricated to investigate the transient current during the resistive switching process. A large transient current flows through the device, which leads to current damage and switching dispersion. The real transient current through the device is disturbed by the measurement method. Therefore, a circuit model of the measurement system was adopted to simulate the transient current. The transient currents were simulated to evaluate the influence of load resistance, system capacitance, device… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 8 publications
(12 reference statements)
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?