Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation

Abstract

High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.

Intelligent read-out circuit for space radiation detection

“…This radiation consists of atoms in which electrons have been stripped away as the atom accelerated approaching the speed of light in interstellar space-finally, only the nucleus of the atom remains [14]. Single-event effects are the phenomena that happened because space radiation affects the digital device in many areas [15], [16]. A single iron will interact with the electronics chip; such as computer memories and microprocessors and caused changes or bit flip of the state of memory or register bits [17].…”