11th International Conference on Group IV Photonics (GFP) 2014
DOI: 10.1109/group4.2014.6961989
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Simulations of Ge based optically controlled field effect transistors

Saravanan Rajamani
1
,
Vito Sorianello
2
,
Andrea De Iacovo
3
et al.

Abstract: We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter

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