Single-crystal NMR for the layered semiconductor TlGaSe<sub>2</sub>

Panich, A. M.; Kashida, Shoji

doi:10.1088/0953-8984/20/39/395211

Cited by 19 publications

(14 citation statements)

References 46 publications

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“…[22]. While no data exist in TlInS 2 so far, we expect that crystal has few absorption maxima across the layer depending on Tl-ion configurations since Tl atom (as well as In) in the F-phase has structurally inequivalent positions on a single unit cell [26]. We expect that excitons labeled A in Fig.…”

Section: Discussionmentioning

confidence: 90%

Band edge photoluminescence of undoped and doped TlInS 2 layered crystals

Королик

Kaabi

Gulbinas

et al. 2017

Journal of Luminescence

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Intrinsic photoluminescence (PL) of undoped and of B-, Ag-or Er-doped TlInS 2 layered single crystals was investigated by confocal spectroscopy. It is found that position and intensity of PL spectral peak at 2.4 eV is vastly dependent on the excitation light incidence and polarization relative to crystallographic directions. For the normal incidence to the layer plane k||c, a significant Stokes shift between the PL peak in respect to exciton absorption energy is highlighted. The shift increases to 80 meV around the crystal phase transformations region of 200 K. We show that presence of B and Ag impurity do not diminish the intrinsic PL emission while Er atoms incorporation enhances it substantially and modifies a fine excitonic line structure in the ferroelectric phase at low T. The obtained results imply out-of-layer plain oriented 2D excitons in TlInS 2 existing at various crystal phases which are influenced by related interlayer stresses.& 2017 Elsevier B.V. All rights reserved. the TlInS 2 exhibit formation a new shallow donor-acceptor pair (DAP) photoluminescence band after low temperature thermocycling [6]. In addition, an imprint of photoactive trap self-polarization in the external electric field under different temperatures was observed and attributed to the dipolar origin of some Contents lists available at ScienceDirect

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Section: Discussionmentioning

confidence: 90%

Band edge photoluminescence of undoped and doped TlInS 2 layered crystals

Королик

Kaabi

Gulbinas

et al. 2017

Journal of Luminescence

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“…A large number of experimental findings. [10][11][12][13][14][15][16][17] indicated that in TlGaSe 2 , a sequence of structural phase transitions from paraphase to INC phase at T i $ 120 K and then to the commensurate (C) ferroelectric phase at T c $ 110 K were observed. Therefore, for a full discussion, the possible influence of the ferroelectric state on the observed phenomena should be discussed.…”

Section: Discussionmentioning

confidence: 99%

Enhanced excitonic photoconductivity due to built-in internal electric field in TlGaSe2 layered semiconductor

Seyidov

Suleymanov

Şale

et al. 2014

Journal of Applied Physics

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The strong enhancement, by several orders of magnitude, of the excitonic peak within the photoconductivity spectrum of TlGaSe2 semiconductor was observed. The samples were polarized in external dc electric field, which was applied prior to the measurements. Due to the accumulation of charges near the surface, an internal electric field was formed. Electron-hole pairs that were created after the absorption of light are fallen in and then separated by the built-in electric field, which prevents radiative recombination process.

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“…Despite the great number of publica tions on these crystals, their interest for researchers has not weakened. The results of studying the physical properties of compounds were recently analyzed in review [1]. As a rule, crystals of this family reveal both semiconductor and ferroelectric proper ties.…”

Section: Introductionmentioning

confidence: 99%