Single Crystalline Diamond p-Channel Cascode and Inverter

Superior high temperature performance of 8 kV NiO/Ga2O3vertical heterojunction rectifiers

“…The barrier height monotonically decreased from 1.02 eV at 300 K to 0.65 eV at 600 K. The R ON values are slightly higher for the HJD, as expected. 14–17 Both types can conduct >100 A cm −2 at 4 V. Note that the R ON in the heterojunction rectifiers does not continue to decrease at forward voltages beyond ∼3 V. It has also been shown that the band alignment remains type II, staggered gap with the magnitude of the conduction and valence band offsets increasing monotonically with annealing temperature. 12…”

“…The forward current transport mechanism in such junctions is typically recombination at low biases and trap-assisted tunneling at higher bias. 10,21–26 Promising rectifier performance has been reported with this approach, 14–36 including V B of 8.32 kV, with figure of merit 13.2 GW cm −2 . 15…”

“…1,3,4 To achieve a high-power figure of merit, a rectifier must have a low drift layer concentration, with high electron mobility, as well as low R ON , and optimized edge termination to prevent current crowding. 1,[5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] The breakdown voltage is larger for thicker drift layers, but this degrades the on-resistance. In addition, vertical geometry devices are desirable, because of their higher power conversion efficiency and absolute currents compared to lateral devices.…”

“…The lack of a practical p-type doping capability for Ga 2 O 3 has led to integration with p-type oxides to form p-n heterojunctions with the n-type Ga 2 O 3 . [9][10][11][12][13][14][15][16] The most successful of these has been NiO, generally deposited by sputtering. The forward current transport mechanism in such junctions is typically recombination at low biases and trap-assisted tunneling at higher bias.…”