Single event transients generation in silicon devices with pulsed laser

Abstract

We perform a comparative study of the characteristics and capabilities of a pulsed laser system that emulates single event injection available at the UIB with respect to similar pulsed laser test facilities in Europe (EADS, IMS) and the United States (JPL, NRL). A series of experimental measurements were taken on a silicon photodiode (Centronic OSD15-5T) used in a previous comparative study conducted by the mentioned centers.