Single-mode 1.3-/spl mu/m photonic crystal vertical-cavity surface-emitting laser

Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

“…published so far. The simple scalar models used in [5,6,[10][11][12] have not revealed the results presented hereby since they cannot calculate properly the PhC hole scattering losses. Furthermore, the present paper shows cw simulation of the PhC-VCSEL characteristics while our prior works [13][14][15] considered pulse operation only.…”

“…This motivates the study of the impact of the hole depth on the modal behaviour of PhC VCSELs to define the smallest aspect ratio assuring good performance. Such preliminary studies have been recently reported by the group of Choquette [5,6,10] and by Ivanov et al [11,12]. The analysis presented in [5,6,10] is based on the 2D plane-wave expansion method with an effective refractive index related to the finite depth of the holes.…”

“…Such preliminary studies have been recently reported by the group of Choquette [5,6,10] and by Ivanov et al [11,12]. The analysis presented in [5,6,10] is based on the 2D plane-wave expansion method with an effective refractive index related to the finite depth of the holes. In [11], the modal behavior of PhC VCSEL has been considered on the basis of the scalar, effective index method and limited to the emission wavelength only.…”

“…The PhC VCSEL structure investigated here is defined by: R A = 4 μm, a/L = 0.5, which have been chosen to assure high modal gain [14] and clear discrimination between the fundamental and first order modes [15]. The ratio a/L = 0.5 has been assumed as the mean value used by other authors [5,6,[35][36][37][38] and has been found to lead to low lasing temperature [16]. The funneling of carriers and their uniformity in the active region is assured by a proton-implanted tunnel junction placed in the node position of the standing wave (Fig.…”

“…The selective oxidation of AlAs layers, which brought considerable reduction of the threshold current of arsenidebased VCSELs [2], is not possible in the phosphide technology. Hence, a combination of a technologically wellestablished tunnel-junction [3] with a photonic-crystal (PhC) structure [4][5][6] might be the best solution for phosphide based VCSELs. Although the PhC technology is still developing, the aspect ratios (hole depth to hole diameter ratio) of about 15-20 [7][8][9] achievable nowadays are encouraging for such PhC VCSEL design.…”