Single-photon emitting diode in silicon carbide

Lohrmann, Alexander; Iwamoto, Naoya; Bodrog, Zoltán; Castelletto, Stefania; Ohshima, Takeshi; Karle, Timothy J.; Gali, Ádám; Prawer, S.; McCallum, Jeffrey C.; Johnson, Brett C.

doi:10.1038/ncomms8783

Cited by 189 publications

(251 citation statements)

References 36 publications

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“…Electronic states localized in the defects of solids have shown great potential for important applications such as single photon emission [1,2], sensing [3], and quantum computing [4]. The nitrogen-vacancy defect center in diamond (N-V center) has been of particular interest in this regard.…”

Section: Introductionmentioning

confidence: 99%

Electron spin coherence of silicon vacancies in proton-irradiated 4 H -SiC

et al. 2017

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We report T 2 spin coherence times for electronic states localized in Si vacancies in 4H-SiC. Our spin coherence study included two SiC samples that were irradiated with 2 MeV protons at different fluences (10 13 and 10 14 cm -2 ) in order to create samples with unique defect concentrations. Using optically detected magnetic resonance and spin echo, the coherence times for each sample were measured across a range of temperatures from 8 K to 295 K. All echo experiments were done at a magnetic field strength of 0.371 T and a microwave frequency of 10.49 GHz. The longest coherence times were obtained at 8 K, being 270 ± 61 µs for the 10 13 cm -2 proton-irradiated sample and 104 ± 17 µs for the 10 14 cm -2 sample. The coherence times for both samples displayed unusual temperature dependences; in particular, they decreased with temperature until 60 K, then increased until 160 K, then decreased again. This increase between 60 and 160 K is tentatively attributed to a motional Jahn-Teller effect. The consistently longer lifetimes for the 10 13 cm -2 sample suggest that a significant source of the spin dephasing can be attributed to dipole-dipole interactions between Si vacancies or with other defects produced by the proton irradiation. The lack of a simple exponential decay for our 10 14 cm -2 sample indicates an inhomogeneous distribution of defect spins.

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Section: Introductionmentioning

confidence: 99%

Electron spin coherence of silicon vacancies in proton-irradiated 4 H -SiC

et al. 2017

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“…The latest observations [21] of single defect systems with electrically controlled quantum functionalities further strengthen the position of SiC as the candidate for the preferred quantum material. Reference [21] demonstrates the fabrication of bright room temperature single photon emitting diodes having fully polarized output, superior photon statistics, and stability in continuous and pulsed modes, all at room temperature.…”

Section: Sic Based Single Photon Sourcesmentioning

confidence: 99%

Section: Sic Based Single Photon Sourcesmentioning

confidence: 99%

“…Reference [21] demonstrates the fabrication of bright room temperature single photon emitting diodes having fully polarized output, superior photon statistics, and stability in continuous and pulsed modes, all at room temperature. Figure 2 presents a scheme of the confocal setup used to characterize the single-photon emitters of Reference [21]. The figure also presents the current vs. voltage properties of the diode, the electroluminescence (EL) map of the edge region of a device, the room temperature EL spectrum and the background corrected anti-bunching traces with g (2) (τ = 0) < 0.1.…”

Section: Sic Based Single Photon Sourcesmentioning

confidence: 99%

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Latest Advances in the Generation of Single Photons in Silicon Carbide

Boretti

Rosa

2016

Technologies

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Abstract:The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC) has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC.

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“…With NV-'s symmetry axis being one of the <111> crystallography directions [26,27], it is possible to identify such planes in which the energy transfer efficiency from NV-to the antenna is maximized. Such a platform may also be realized by other substrates with near surface emitters such as a SiC with defects [28] or a silicon with embedded quantum dots [29]. A review on quantum dots and ways to enhance its emission is given by Xu et al [30].…”

Section: Introductionmentioning

confidence: 99%

Dipole Emission to Surface Plasmon-Coupled Enhanced Transmission in Diamond Substrates with Nitrogen Vacancy Center- Near the Surface

Djalalian-Assl

2017

Photonics

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For distances less 10 nm, a total energy transfer occurs from a quantum emitter to a nearby metallic surface, producing evanescent surface waves that are plasmonic in nature. When investigating a metallic nanohole supported on an optically dense substrate (such as diamond with nitrogen vacancy center), the scattering occurred preferentially from the diamond substrate towards the air for dipole distances less 10 nm from the aperture. In addition, an enhancement to the dipole's radiative decay rate was observed when resonance of the aperture matched the emitters wavelength. The relationship between an emitter and a nearby resonant aperture is shown to be that of the resonance energy transfer where the emitter acts as a donor and the hole as an acceptor. In conjunction with the preferential scattering behavior, this has led to the proposed device that operates in transmission mode, eliminating the need for epi-illumination techniques and optically denser than air superstrates in the collection cycle, hence making the design simpler and more suitable for miniaturization. A design criterion for the surface grating is also proposed to improve the performance, where the period of the grating differs significantly from the wavelength of the surface plasmon polaritons. Response of the proposed device is further studied with respect to changes in nitrogen vacancy's position and its dipolar orientation to identify the crystallographic planes of diamond over which the performance of the device is maximized.

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Single-photon emitting diode in silicon carbide

Cited by 189 publications

References 36 publications

Electron spin coherence of silicon vacancies in proton-irradiated 4 H -SiC

Electron spin coherence of silicon vacancies in proton-irradiated 4 H -SiC

Latest Advances in the Generation of Single Photons in Silicon Carbide

Dipole Emission to Surface Plasmon-Coupled Enhanced Transmission in Diamond Substrates with Nitrogen Vacancy Center- Near the Surface

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