2023
DOI: 10.1016/j.oceram.2023.100506
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Sintered reaction-bonded silicon nitride ceramics for power-device substrates -review-

Yuki Nakashima,
Hiroyuki Miyazaki,
You Zhou
et al.
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Cited by 3 publications
(2 citation statements)
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“…Commercially available 25 mm square Si 3 N 4 substrates (TSN-90, Toshiba Materials Co., Ltd., Kanagawa, Japan) were ground to three different thicknesses of 250, 150, and 70 ¯m. The substrate has dense structure (3.35 g/cm 3 ) and some large-elongated grains having widths around 5 ¯m and lengths over 20 ¯m dispersed in a matrix of fine grains. 7) After surface polishing, in which the representative surface roughness (R a ) was 0.369 ¯m, the DBS was measured using an AC voltage tester (7473, Keisoku Giken Co., Ltd., Kanagawa, Japan).…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Commercially available 25 mm square Si 3 N 4 substrates (TSN-90, Toshiba Materials Co., Ltd., Kanagawa, Japan) were ground to three different thicknesses of 250, 150, and 70 ¯m. The substrate has dense structure (3.35 g/cm 3 ) and some large-elongated grains having widths around 5 ¯m and lengths over 20 ¯m dispersed in a matrix of fine grains. 7) After surface polishing, in which the representative surface roughness (R a ) was 0.369 ¯m, the DBS was measured using an AC voltage tester (7473, Keisoku Giken Co., Ltd., Kanagawa, Japan).…”
Section: Methodsmentioning
confidence: 99%
“…Among ceramic materials, Si 3 N 4 is one of the most promising heat-dissipating substrate materials owing to its outstanding mechanical properties and improved thermal conductivity. 2), 3) In addition to these properties, dielectric breakdown strength (DBS), which indicates stability under high voltage, is also essential. However, there are a limited number of reports on DBS of sintered Si 3 N 4 .…”
Section: Introductionmentioning
confidence: 99%