Site-specific ion desorption from condensed F3SiCD2CH2Si(CH3)3 induced by Si-2p core-level ionizations studied with photoelectron photoion coincidence (PEPICO) spectroscopy, Auger photoelectron coincidence spectroscopy (APECS) and Auger electron photoion coincidence (AEPICO) spectroscopy

Mase, Kenji; Kobayashi, Eiichi; Nambu, Akira; Kakiuchi, Takuhiro; Takahashi, Osamu; Tabayashi, Kiyohiko; Ohshita, Joji; Hashimoto, Shogo; Tanaka, Masatoshi; Nagaoka, Shin‐ichi

doi:10.1016/j.susc.2012.09.003

Cited by 6 publications

(6 citation statements)

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“…For comparison, Figures and also represent Si:L 23 VV AES of Si(CH 3 ) 4 , SiF 4 , and SiCl 4 vapors obtained previously. − The computational spectra of FSMSE and CSMSE given in Figures and are fairly consistent with the experimental spectra. The spectra of FSMSE vapor (Figure a–c) are similar to those obtained for condensed F 3 SiCD 2 CH 2 Si(CH 3 ) 3 …”

Section: Resultssupporting

confidence: 72%

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Nagaoka

Kakiuchi

Ohshita³

et al. 2016

J. Phys. Chem. A

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Site-specific electron relaxations caused by Si:2p core-level photoionizations in FSiCHCHSi(CH) and ClSiCHCHSi(CH) vapors have been studied by means of the photoelectron Auger electron coincidence spectroscopy. FSiCHCHSi(CH) shows almost 100% site-specificity in fragmentation caused by the Si:2p ionization. However, substitution of Cl for F of FSiCHCHSi(CH) considerably reduces the site-specificity at the Si atom bonded to three halogen atoms, with the site-specificity at the Si site bonded to three methyl groups remaining largely unchanged. The site-specificity reduction in ClSiCHCHSi(CH) is considered to take place during the transient period between Si:LVV Auger electron emission and the subsequent fragmentation. The reason for the reduction can be explained in terms of some differences between these two molecules in the LVV Auger decay at the Si site bonded to the three halogen atoms.

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Section: Resultssupporting

confidence: 72%

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Nagaoka

Kakiuchi

Ohshita³

et al. 2016

J. Phys. Chem. A

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“…A broad peak is seen at about 60 eV, and a similar result has also been reported in a condensed phase study. 15 Furthermore, the plot of the BDF computed for Si[F]ÀF after Si[F]:2p ionization also has a peak at about 60 eV for FSMSE (black line in Figure 2e), and the Auger final state at about 60 eV has two valence MO holes with Si[F]ÀF bonding character (σ Si[F]ÀF ) with high probability. 20 All of the abovementioned experimental and computational results suggest that Si[F]ÀF bond dissociation forming F + is a result of an Auger decay at about 60 eV.…”

Section: Resultsmentioning

confidence: 98%

“…This can potentially be studied using Auger photoelectron coincidence spectroscopy (APECS). However, it is not within the scope of this paper to present APECS for HSMSB, and the results of APECS for condensed FSMSE will be reported elsewhere …”

Section: Resultsmentioning

confidence: 99%

“…However, it is not within the scope of this paper to present APECS for HSMSB, and the results of APECS for condensed FSMSE will be reported elsewhere. 15 4.2. FSMSE.…”

Section: Resultsmentioning

confidence: 99%

“…Site-specific fragmentation on surfaces or in bulk material is also very interesting, − and its study has some advantages compared with that in the vapor phase. However, on surfaces or in bulk material, reneutralization and recapture by the substrate or nearby molecules can blur the fragmentation pattern intrinsic to the isolated molecule, and fast energetic processes may dominate .…”

Section: Introductionmentioning

confidence: 99%

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A Study To Control Chemical Reactions Using Si:2p Core Ionization: Site-Specific Fragmentation

et al. 2011

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In an aim to create a "sharp" molecular knife, we have studied site-specific fragmentation caused by Si:2p core photoionization of bridged trihalosilyltrimethylsilyl molecules in the vapor phase. Highly site-specific bond dissociation has been found to occur around the core-ionized Si site in some of the molecules studied. The site specificity in fragmentation and the 2p binding energy difference between the two Si sites depend in similar ways on the intersite bridge and the electronegativities of the included halogen atoms. The present experimental and computational results show that for efficient "cutting" the following conditions for the two atomic sites to be separated by the knife should be satisfied. First, the sites should be located far from each other and connected by a chain of saturated bonds so that intersite electron migration can be reduced. Second, the chemical environments of the atomic sites should be as different as possible.

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Coincidence, Resonant, and High‐Energy Electron Spectroscopies – Resonant Auger, Electron Coincidence for Surface Analysis

Kövér

2015

Encyclopedia of Analytical Chemistry

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Electron spectroscopic methods are powerful and efficient tools for characterization of chemical and electronic structures of surface and interface layers of solids. The electron spectroscopic methods most widely applied for surface chemical analysis, the X‐ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) are providing information on the elemental composition of the surface and interface layers, as well as on the chemical state of the components. In addition, these techniques can offer possibilities for depth‐resolved and/or laterally resolved analysis in a nondestructive (up to several nanometers depth) or destructive (in combination with ion sputtering, up to several hundred nanometers depth) way. Quantitative surface chemical analytical applications of these methods are greatly helped by physical quantities characterizing electron transport, which can be derived from reflection electron energy loss spectroscopic (REELS) studies of given materials. There are, however, a plenty of opportunities available how to improve the sensitivity, selectivity, and information depth of these techniques. Among these, the coincidence techniques help to identify the physical processes leading to specific structures in the experimental electron spectra, clean up the spectra from unwanted contributions of interfering processes, and limit the depth of analytical information. The resonant excitation can yield unprecedented chemical state selectivity and can greatly improve the detection limit for particular species while providing unique information on the electronic structure in the proximity of the excited atom. High‐energy‐resolution spectroscopy of high‐energy electrons induced by hard X‐rays from solids allows to get an insight into deeper subsurface regions owing to the much increased information depth for energetic electrons, and in addition to the possibility for collecting information on the bulk chemical and electronic structures without interfering effects because of the presence of the surface, this spectroscopy provides a nondestructive access to the chemical state‐resolved composition at deeply buried interfaces. This article intends to give a brief review on selected electron–electron coincidence techniques, resonant Auger electron spectroscopic methods, and high‐energy electron spectroscopic methods, namely, the hard X‐ray photoelectron spectroscopy (HAXPES), focusing on the principle and specific instrumentation of the techniques, the underlying physics of the fundamental processes utilized, the analytical information provided, and important fields of applications. These highly sensitive, selective, and uniquely informative electron spectroscopic methods are expected to be used increasingly in studies of sophisticated novel materials of great practical importance, especially in fields of nanotechnology, micro‐ and nanoelectronics, nano‐biotechnology, nanomedicine, and development of novel solar cells.

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Site-specific ion desorption from condensed F3SiCD2CH2Si(CH3)3 induced by Si-2p core-level ionizations studied with photoelectron photoion coincidence (PEPICO) spectroscopy, Auger photoelectron coincidence spectroscopy (APECS) and Auger electron photoion coincidence (AEPICO) spectroscopy

Cited by 6 publications

References 56 publications

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

A Study To Control Chemical Reactions Using Si:2p Core Ionization: Site-Specific Fragmentation

Coincidence, Resonant, and High‐Energy Electron Spectroscopies – Resonant Auger, Electron Coincidence for Surface Analysis

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Site-specific ion desorption from condensed F3SiCD2CH2Si(CH3)3 induced by Si-2p core-level ionizations studied with photoelectron photoion coincidence (PEPICO) spectroscopy, Auger photoelectron coincidence spectroscopy (APECS) and Auger electron photoion coincidence (AEPICO) spectroscopy

Cited by 6 publications

References 56 publications

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

A Study To Control Chemical Reactions Using Si:2p Core Ionization: Site-Specific Fragmentation

Coincidence, Resonant, and High‐Energy Electron Spectroscopies – Resonant Auger, Electron Coincidence for Surface Analysis

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Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy