Size-dependent electrical constriction resistance for contacts of arbitrary size: from Sharvin to Holm limits

Mikrajuddin, A.; Shi, Frank G.; Kim, H.K.; Okuyama, Kikuo

doi:10.1016/s1369-8001(99)00036-0

Cited by 108 publications

(89 citation statements)

References 15 publications

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“…It is straightforward to understand that u = V − R C I, but it has been already stated that R C is a function of stress. This is R C = R C σ [8,32,33]. Therefore, u is also a function of stress u = u σ and this makes the current density J highly dependent on stress.…”

Section: Consideration Of the Proposed Approach In The Simmons' Modelmentioning

confidence: 99%

A Novel and Inexpensive Approach for Force Sensing Based on FSR Piezocapacitance Aimed at Hysteresis Error Reduction

et al. 2018

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Force-sensing resistors (FSRs) are inexpensive alternatives to load cells. They are suitable for applications where noninvasive devices are needed to measure force, stress, or pressure. However, they have been proved to be hysteresis prone and offer nonrepeatable readings due to their highly voltage-dependent electrical resistance. A piezocapacitive effect has been found as an alternative phenomenon that is able to offer force-dependent readings of capacitance with less hysteresis error. Also, this capacitance is not dependent on voltage, which also improves repeatability in force measurements. Since measuring capacitance is more expensive than resistance, the least costly conditioning circuitry is desired. An inexpensive alternative using an LM555 that oscillates depending on capacitance is here presented. Hysteresis and repeatability errors have been reduced for a widespread-used force-sensing resistor brand.

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Section: Consideration Of the Proposed Approach In The Simmons' Modelmentioning

confidence: 99%

A Novel and Inexpensive Approach for Force Sensing Based on FSR Piezocapacitance Aimed at Hysteresis Error Reduction

et al. 2018

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“…where (K) is a slowly varying Gamma function of unity order [24]. In this particular case, K is close to the unit value and (K) is thus close to 0.5.…”

Section: A Error Evaluationmentioning

confidence: 78%

Impact of the Surface Roughness Description on the Electrical Contact Resistance of Ohmic Switches Under Low Actuation Forces

Pennec

Peyrou

Leray

et al. 2012

IEEE Trans. Compon., Packag. Manufact. Technol.

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-At the present time the insertion of RF MEMS switches into real architecture requires reduced actuation voltage, reduced dimensions and a better control of the electrical and electromechanical behavior that gives more importance to surface effects, their understanding and modeling. The use of such devices needs the development of methods for estimating the contact performances as a function of surface roughness, contact materials and contact topologies. With the increase of computation capabilities the rough surface topography can be implemented in the finite element model but implies long calculation times or even calculation overloading if a high definition of the roughness is desired. To reduce these limitations, assumptions on the micro-geometry are required. This work treats, by use of finite element modeling, the influence of the definition of roughness of contacting switch members on the electrical contact resistance of resistive switches and investigates the error introduced by using a minimal defined AFM sampling interval of 10nm. The present numerical analysis is implemented for switch test structures.

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“…Mikrajuddin et al [28] and Shi et al [29] have found expressions for the constriction (contact) resistance that exists between electrodes of arbitrary sizes. In their work, the contact resistance follows power laws with fixed coefficients, but some modifications had to be introduced by the authors in order to account for the stress-dependent area of Equation (7).…”

Section: Physical Model For Quantum Tunneling Conduction Of Fsrsmentioning

confidence: 99%

Self-Compensated Driving Circuit for Reducing Drift and Hysteresis in Force Sensing Resistors

et al. 2018

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Force Sensing Resistors (FSRs) are manufactured from a blend of conductive nanoparticles dispersed in an insulating polymer matrix. FSRs exhibit large amounts of hysteresis and drift error, but currently, a great effort is placed on improving their performance through different techniques applied during sensor manufacturing. In this article, a novel technique for improving the performance of FSRs is presented; the method can be applied to already-manufactured sensors, which is a clear benefit of the proposed procedure. The method is based on driving the sensors with a modified-astable 555 oscillator, in which the oscillation frequency is set from the sensor's capacitance and resistance. Considering that the sensor's capacitance and resistance have opposite signs in the drift characteristic, the driving circuit provides self-compensated force measurements over extended periods of time. The feasibility of the driving circuit to reduce hysteresis and to avoid sensitivity degradation is also tested. In order to obtain representative results, the experimental measurements from this study were performed over eight FlexiForce A201-25 sensors.

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Size-dependent electrical constriction resistance for contacts of arbitrary size: from Sharvin to Holm limits

Cited by 108 publications

References 15 publications

A Novel and Inexpensive Approach for Force Sensing Based on FSR Piezocapacitance Aimed at Hysteresis Error Reduction

A Novel and Inexpensive Approach for Force Sensing Based on FSR Piezocapacitance Aimed at Hysteresis Error Reduction

Impact of the Surface Roughness Description on the Electrical Contact Resistance of Ohmic Switches Under Low Actuation Forces

Self-Compensated Driving Circuit for Reducing Drift and Hysteresis in Force Sensing Resistors

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