Sketched oxide single-electron transistor

Cheng, Guanglei; Siles, Pablo F.; Bi, Feng; Cen, Cheng; Bogorin, Daniela F.; Bark, Chung Wung; Folkman, C. M.; Park, Jae-Wan; Eom, Chang‐Beom; Medeiros‐Ribeiro, G.; Levy, Jeremy

doi:10.1038/nnano.2011.56

Cited by 130 publications

(115 citation statements)

References 30 publications

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“…Recently, there has been a mounting interest in 2DEG systems formed at epitaxially grown insulating metal oxide heterointerfaces12 due to the very high charge carrier mobilities13 and their potential for high‐performance electronics14, 15 as well as the rich new physics 16. Building on the early work on insulating oxides, Tampo et al17 demonstrated the formation of 2DEGs in semiconducting ZnO/MgZnO heterointerfaces for which electron mobilities exceeding 700 000 cm 2 V −1 s −1 , albeit at cryogenic temperatures, have recently been reported 18…”

Section: Introductionmentioning

confidence: 99%

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

et al. 2015

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High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement.

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Section: Introductionmentioning

confidence: 99%

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

et al. 2015

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“…It is possible to change the conducting state to form structures with linewidths as narrow as 2 nm and a point resolution approaching 1 nm [15]. This technique has enabled the creation of a variety of nanostructures and devices, including nanoscale transistors [15], rectifying junctions [16], optical photodetectors [17], and singleelectron transistors [18]. The experiments described here are performed on LAO/STO Hall-cross nanostructures characterized by low-temperature magnetotransport measurements.…”

Section: Introductionmentioning

confidence: 99%

Anomalous Transport in Sketched Nanostructures at theLaAlO3/SrTiO3Interface

et al. 2013

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The oxide heterostructure LaAlO 3 =SrTiO 3 supports a two-dimensional electron liquid with a variety of competing phases, including magnetism, superconductivity, and weak antilocalization because of Rashba spin-orbit coupling. Further confinement of this two-dimensional electron liquid to the quasi-onedimensional regime can provide insight into the underlying physics of this system and reveal new behavior. Here, we describe magnetotransport experiments on narrow LaAlO 3 =SrTiO 3 structures created by a conductive atomic force microscope lithography technique. Four-terminal local-transport measurements on Hall bar structures about 10 nm wide yield longitudinal resistances that are comparable to the resistance quantum h=e 2 and independent of the channel length. Large nonlocal resistances (as large as 10 4 ) are observed in some but not all structures with separations between current and voltage that are large compared to the two-dimensional mean-free path. The nonlocal transport is strongly suppressed by the onset of superconductivity below about 200 mK. The origin of these anomalous transport signatures is not understood, but may arise from coherent transport defined by strong spin-orbit coupling and/or magnetic interactions.

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“…These include the use of pre-patterned masks [19], physical etching of the interface [20], and AFM-based lithography [21][22][23]. Such techniques have shown promising results, and have been used to realize transistor-like nanoscale devices controlled via the field effect from a global back gate or local side gates.…”

mentioning

confidence: 99%

Nanoscale Electrostatic Control of Oxide Interfaces

et al. 2015

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We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO3/SrTiO3 as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultra-low leakage currents, and long term stability of these gates allow us to perform a variety of studies in different device geometries from room temperature down to 50 mK. Using a split-gate device we demonstrate the formation of a narrow conducting channel whose width can be controllably reduced via the application of appropriate gate voltages. We also show that a single narrow gate can be used to induce locally a superconducting to insulating transition. Furthermore, in the superconducting regime we see indications of a gate-voltage controlled Josephson effect.Despite decades of intense study, transition metal oxides continue to reveal fascinating and unexpected physical properties that arise from their highly correlated electrons [1]. Propelled by recent developments in oxides thin film technology it has now become possible to create high quality interfaces between such complex oxides, which reveal a new class of emergent phenomena often non-existent in the constituent materials [2,3]. In particular, there has been a growing interest in interfaces that host a conducting two dimensional electron system (2DES) [4,5]. This 2DES has been shown to support high mobility electrons [5][6][7], magnetism [8] and superconductivity [9]. In addition to this inherently rich phase space, in-situ electrostatic gating can be used not only to alter the carrier density [10], but it can significantly change the spin-orbit coupling (SOC) [11,12] and even drive transitions from a superconducting to an insulating state [13].Bulk transport studies of oxide interfaces have played an important role toward building a better understanding of these new material systems. However, it is becoming increasingly clear that in order to fully grasp the details of the complex coexisting phases at the interface, one must probe the system at much smaller length scales. Recent scanning probe experiments have indeed clearly demonstrated that the electronic properties of the interface can change dramatically over microscopic length scales [14][15][16]. In this context, nanoscale electronic devices could provide direct information on how such strong local variations in physical properties affect mesoscopic charge transport. Perhaps even more exciting is the possibility of discovering and manipulating new electronic states that are predicted to arise from the interplay between confinement, superconductivity and SOC [17]. Furthermore, the ability to locally drive phase transitions at the interface could potentially yield technologically relevant oxide-based nano-electronic devices with novel functionality [18].Existing methods for confinement at the interface involve some form of nanoscale patterning, which renders selected portions of the interface insulati...

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Sketched oxide single-electron transistor

Cited by 130 publications

References 30 publications

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

Anomalous Transport in Sketched Nanostructures at theLaAlO3/SrTiO3Interface

Nanoscale Electrostatic Control of Oxide Interfaces

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