Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory

Takahashi, H.; Okamoto, Yuki; Hamada, Takashi; Komura, Yoshiaki; Watanabe, Shin; Tsuda, Kazuki; Sawai, Hiromi; Matsuzaki, Takashi; Ando, Yasuhisa; Onuki, Tatsuya; Kunitake, Hitoshi; Yamazaki, S.; Kobayashi, Daisuke; Ikuta, Akiko; Makino, Takahiro; Ohshima, Takeshi

doi:10.1109/irps48203.2023.10118302

2023 IEEE International Reliability Physics Symposium (IRPS) 2023

DOI: 10.1109/irps48203.2023.10118302

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Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory

H. Takahashi¹,

Yuki Okamoto

Takashi Hamada³

et al.

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A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time

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et al. 2024

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Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory

Cited by 1 publication

References 15 publications

A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time

A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time

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