Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment

Xiong, Y.; Feeley, A.; Pieper, Nicholas J.; Ball, D. R.; Narasimham, B.; Brockman, John D.; Dodds, N. A.; Wender, S. A.; Wen, S.-J.; Fung, Rita; Bhuva, B. L.

doi:10.1109/irps48227.2022.9764523

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment

Cited by 10 publications

References 30 publications

Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell

Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell

Evaluation of Single-Event Upset in FinFET Device

Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET Technology

Contact Info

Product

Resources

About