Soft X-ray photoemission studies of

Cháb, V.; Pekárek, L.; Ulrych, I.; Suchy, J.; Peloi, M.; Evans, M. M. R.; Comicioli, C.; Zacchigna, M.; Crotti, C.

doi:10.1016/s0039-6028(96)01378-7

Cited by 15 publications

(8 citation statements)

References 14 publications

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“…Previous reports have used both three components 4,21 and four components 5,22 to fit the In 4d core level in clean InP. The three-component fit puts the bulk component in the center, with two surface components on either side, similar to our result.…”

Section: B Results For the Two-step Cleaning Processsupporting

confidence: 86%

“…There are different ways of cleaning InP͑100͒ surfaces: ion sputtering and annealing, 4 -7 atomic hydrogen cleaning, 1-3 sulfur passivation, [5][6][7] and chemical cleaning. [5][6][7] Chemical cleaning offers an effective and practical method for cleaning semiconductor surfaces. It should be noted that the InP surface can be made stable up to 480°C when it is under a P overpressure as is used in molecular beam epitaxial ͑MBE͒ growth.…”

Section: Introductionmentioning

confidence: 99%

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Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission

Sun

Liu

Machuca

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Wet chemical cleaning of InP surfaces investigated by in situ and ex situ infrared spectroscopyDependence of indium-tin-oxide work function on surface cleaning method as studied by ultraviolet and x-ray photoemission spectroscopiesThe chemical cleaning of indium phosphide ͑InP͒,͑100͒ surfaces is studied systematically by using photoemission electron spectroscopy. In order to achieve the necessary surface sensitivity and spectral resolution, synchrotron radiation with photon energies ranging from 60 to 600 eV are used to study the indium 4d, phosphorus 2p, carbon 1s, and oxygen 1s core levels, and the valence band. Typical H 2 SO 4 :H 2 O 2 :H 2 O solutions used to etch GaAs͑100͒ surfaces are applied to InP͑100͒ surfaces. It is found that the resulting surface species are significantly different from those found on GaAs͑100͒ surfaces and that a second chemical cleaning step using a strong acid is required to remove residual surface oxide. This two-step cleaning process leaves the surface oxide free and with approximately 0.4 ML of elemental phosphorus, which is removed by vacuum annealing. The carbon coverage is also reduced dramatically from approximately 1 to about 0.05 ML. The chemical reactions are investigated, the resulting InP surface species at different cleaning stages are determined, and the optimum cleaning procedure is presented.

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Section: B Results For the Two-step Cleaning Processsupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission

Sun

Liu

Machuca

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Different ways of cleaning InP(100) surfaces have been used [1][2][3][4][5][6][7][8][9][10][11]. Ion sputtering and annealing are typical cleaning methods for metals and thermally stable materials, but the relatively low decomposition temperature of InP (380 o C) precludes effective annealing of the damage caused by ion sputtering [4,5,6,7]. Sulfur passivation leads to stable surface termination, but the chemisorbed sulfur atoms cannot be removed completely by thermal annealing at temperatures below the decomposition temperature of InP [5,6,7].…”

Section: Introductionmentioning

confidence: 99%

“…Ion sputtering and annealing are typical cleaning methods for metals and thermally stable materials, but the relatively low decomposition temperature of InP (380 o C) precludes effective annealing of the damage caused by ion sputtering [4,5,6,7]. Sulfur passivation leads to stable surface termination, but the chemisorbed sulfur atoms cannot be removed completely by thermal annealing at temperatures below the decomposition temperature of InP [5,6,7]. The effectiveness of atomic hydrogen cleaning [1,2,3] is yet to be proven, and can result in the buildup and desorption of phosphine leading to an indium-rich surface [12].…”

Section: Introductionmentioning

confidence: 99%

Optimized cleaning method for producing device quality InP(100) surfaces

Sun

Liu

Machuca

et al. 2005

Journal of Applied Physics

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A very effective, two-step chemical etching method to produce clean InP(100) surfaces when combined with thermal annealing has been developed. The hydrogen peroxide/sulfuric acid based solutions, which are successfully used to clean GaAs(100) surfaces, leave a significant amount of residual oxide on the InP surface which can not be removed by thermal annealing. Therefore, a second chemical etching step is needed to remove the oxide. We found that strong acid solutions with HCl or H 2 SO 4 are able to remove the surface oxide and leave the InP surface passivated with elemental P which is, in turn, terminated with H. This yields a hydrophobic surface and allows for lower temperatures to be used during annealing. We also determined that the effectiveness of oxide removal is strongly dependent on the concentration of the acid. Surfaces cleaned by HF solutions were also studied and result in a hydrophilic surface with F terminated surface In atoms. The chemical reactions leading to the differences in behavior between InP and GaAs are analyzed and the optimum cleaning method for InP is discussed.

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“…Although H 2 SO 4 has been shown to act in a similar way to HCl, 36 it was not adopted here because the chemisorbed sulfur cannot be completely removed at a temperature lower than the decomposition temperature of InP. 33 HF cleaning partially terminates the surface with fluorine. 21 Since such a surface is hydrophilic and re-oxidizes when rinsed in water and/or exposed to air, an annealing step was required.…”

Section: A Preparation Of An Oxide Free Undamaged Inp Surfacementioning

confidence: 99%

Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

Mannarino

Chintala

Moussa

et al. 2015

Journal of Applied Physics

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Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III-V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III-V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of different chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.

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Soft X-ray photoemission studies of

Cited by 15 publications

References 14 publications

Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission

Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission

Optimized cleaning method for producing device quality InP(100) surfaces

Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

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