Solar-blind UV communication based on sensitive β -Ga2O3 photoconductive detector array

Abstract

In this work, a solar-blind UV photodetector array is fabricated and discussed, based on a metalorganic chemical vapor deposition-grown β-Ga2O3 thin film, toward optical communication application. The high-performance photodetector unit shows a significant photo-to-dark current ratio of 3.4 × 105, a high responsivity of 61.3 A/W, an external quantum efficiency of 3 × 104%, a specific detectivity of 5.2 × 1014 Jones, and a fast response time of 35 ms. In addition, a solar-blind UV/visible light rejection ratio of 2.43 × 102 is achieved, suggesting decent spectral selectivity. For the array, the maximum photocurrent standard deviation is below 12% for every group with a similar layout arrangement. Furthermore, the dark current is at picoampere level, leading to low background noise for the optical communication system. Taking the 50% photocurrent value as the readout threshold line to avoid interference from the exterior meanwhile retaining about 500 on/off cycles, the optical communicated result shows effective outputting information “NJUPT2023” coming from a total of 256 “1” and “0” signals.

Flexible self-powered solar-blind Schottky photodetectors based on individual Ga2O3 microwire/MXene junctions

“…Thus, the Ga 2 O 3 MW/MXene photodetector's decay duration lasts two orders of magnitude longer than its rise time, which can be attributed to the PPC effect. 52…”

“…Thus, the Ga 2 O 3 MW/MXene photodetector's decay duration lasts two orders of magnitude longer than its rise time, which can be attributed to the PPC effect. 52 To further explore the working mechanism of the Ga 2 O 3 MW/MXene photodetector, Fig. 5(c) shows the energy band structure diagram of the photodetector under UV illumination.…”

Multi-pixels gallium oxide UV detector array and optoelectronic applications

“…Currently, most imaging test methods are based on the stationary mask method shown in figure 11 For comparison, the real-time digital signal conversion function has been implemented by Shen et al in 2023 [102]. This also indicates that the Ga 2 O 3 photo detector array has made new advancements in the field of solar blind UV communication.…”

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport

“…These photodetectors vary according to their structures, including metal–semiconductor–metals (MSMs), heterojunctions, Schottky barrier diodes (SBDs), and others . Besides, they can work as a single device or together as an array. − Such a diversity of the device structure is possible because Ga 2 O 3 exists in five crystalline phases, α, β, γ, δ, and ε, all of which can be grown using various techniques, including laser molecular beam epitaxy (laser-MBE), pulsed laser deposition (PLD), magnetron sputtering, metal–organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), halide vapor-phase epitaxy (HVPE), and mist chemical vapor deposition (mist-CVD), providing a convenient way for its development in relevant devices.…”