Solution-Based Metal Induced Crystallization of Amorphous Silicon Films

Abstract

A viscous Nickel (Ni) solution was applied on amorphous Si films by spin coating and its effect on the crystallization of amorphous Si films was investigated with a two-step annealing process. The experimental results show that with the help of the two-step annealing, the crystallization of the film can take place at 500oC. At the same time, the crystalline fraction gets up to 79.4% after annealing at a high temperature of 520oC and the grain size of the polycrystalline Si films is approximately 200 nm.