Solution epitaxy of patterned ZnO nanorod arrays by interference lithography

Le, Hong Quang; Goh, Gregory K. L.; Teng, Jinghua; Chew, Ah Bian; Lim, Swee Kuan

doi:10.1016/j.pcrysgrow.2012.03.001

Cited by 3 publications

(2 citation statements)

References 28 publications

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“…The Zn 2p 3/2 peak (Figure 4c) is located at 1023 eV, which has shifted at ~2 eV compared to metallic zinc samples. This large shift is indicative of a greater degree of oxidation for the Zn atoms in the lattice [28]. Since the XRD patterns have shown that the ZnO (002) is the main peak, while morphologies have clearly changed, the results supported the idea that Al 2 O 3 did not doped structurally into the ZnO, as the structural feature of the ZnO remains Wurzite.…”

Section: Resultsmentioning

confidence: 61%

Optimization of Pulsed Laser Ablation and Radio-Frequency Sputtering Tandem System for Synthesis of 2D/3D Al2O3-ZnO Nanostructures: A Hybrid Approach to Synthesis of Nanostructures for Gas Sensing Applications

et al. 2023

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In this paper, a unique hybrid approach to design and synthesize 2D/3D Al2O3-ZnO nanostructures by simultaneous deposition is presented. Pulsed laser deposition (PLD) and RF magnetron sputtering (RFMS) methods are redeveloped into a single tandem system to create a mixed-species plasma to grow ZnO nanostructures for gas sensing applications. In this set-up, the parameters of PLD have been optimized and explored with RFMS parameters to design 2D/3D Al2O3-ZnO nanostructures, including nanoneedles/nanospikes, nanowalls, and nanorods, among others. The RF power of magnetron system with Al2O3 target is explored from 10 to 50 W, while the ZnO-loaded PLD’s laser fluence and background gases are optimized to simultaneously grow ZnO and Al2O3-ZnO nanostructures. The nanostructures are either grown via 2-step template approach, or by direct growth on Si (111) and MgO<0001> substrates. In this approach, a thin ZnO template/film was initially grown on the substrate by PLD at ~300 °C under ~10 milliTorr (1.3 Pa) O2 background pressure, followed by growth of either ZnO or Al2O3-ZnO, using PLD and RFMS simultaneously under 0.1–0.5 Torr (13–67 Pa), and Ar or Ar/O2 background in the substrate temperate range of 550–700 °C. Growth mechanisms are then proposed to explain the formation of Al2O3-ZnO nanostructures. The optimized parameters from PLD-RFMS are then used to grow nanostructures on Au-patterned Al2O3-based gas sensor to test its response to CO gas from 200 to 400 °C, and a good response is observed at ~350 °C. The grown ZnO and Al2O3-ZnO nanostructures are quite exceptional and remarkable and have potential applications in optoelectronics, such in bio/gas sensors.

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Section: Resultsmentioning

confidence: 61%

Optimization of Pulsed Laser Ablation and Radio-Frequency Sputtering Tandem System for Synthesis of 2D/3D Al2O3-ZnO Nanostructures: A Hybrid Approach to Synthesis of Nanostructures for Gas Sensing Applications

et al. 2023

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“…Doped ZnO films are promising alternatives to replace indium-tinoxide (ITO) films as transparent conducting films due to their stable electrical and optical properties. The doping of Al [5], Ga [6], and In [7] in ZnO films has been widely studied to enhance n-type conductivity. The trivalent cation-doped ZnO films present good electrical conductivity and transparency over the visible spectrum.…”

Section: Introductionmentioning

confidence: 99%

Structural, Optical and Electrical Properties of Spray Pyrolysed Ti-Doped ZnO Films

Murali¹

2014

ECS Trans.

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Un-doped and Ti-doped ZnO films were deposited on microscopic glass substrates using spray pyrolysis technique systematically by controlling the deposition parameters. Zinc acetylacetonate was dissolved in ethanol and sprayed at substrate temperature of 400°C. For doped ZnO, titanyl acetylacetonate solution was added to the starting solution. The solution was sprayed using different doping concentrations ranging from 0.1% to 0.9%. X-ray diffraction patterns indicated the principle lines of the hexagonal wurzite ZnO. The band gap of the films decreases from 3.62 eV to 3.52 eV as the concentration of Ti doping increases. As deposited undoped films exhibited resistivity around 105 ohm cm. Annealing in vacuum, decreased the resistivity by three orders. As the doping concentration increased, the resistivtiy decreases further to 8 ohm cm for 0.9 % Ti doping. Dye sensitized solar cells fabricated with the undoped and Ti doped ZnO films indicated that the doped films exhibited higher photo outpurt compared to undoped ones.

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Highly controllable and reproducible ZnO nanowire arrays growth with focused ion beam and low-temperature hydrothermal method

Diao

Zhang²,

Zhou³

et al. 2014

Applied Surface Science

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Solution epitaxy of patterned ZnO nanorod arrays by interference lithography

Cited by 3 publications

References 28 publications

Optimization of Pulsed Laser Ablation and Radio-Frequency Sputtering Tandem System for Synthesis of 2D/3D Al2O3-ZnO Nanostructures: A Hybrid Approach to Synthesis of Nanostructures for Gas Sensing Applications

Optimization of Pulsed Laser Ablation and Radio-Frequency Sputtering Tandem System for Synthesis of 2D/3D Al2O3-ZnO Nanostructures: A Hybrid Approach to Synthesis of Nanostructures for Gas Sensing Applications

Structural, Optical and Electrical Properties of Spray Pyrolysed Ti-Doped ZnO Films

Highly controllable and reproducible ZnO nanowire arrays growth with focused ion beam and low-temperature hydrothermal method

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