Solution-processed antimonene integrated arc-shaped fiber for mode-locked pulse laser generation at 1.9 μm spectral region

Ahmad, Harith; Azali, Nur Atikah; Samion, Muhamad Zharif; Reduan, Siti Aisyah; Yusoff, Norazriena

doi:10.1016/j.optmat.2022.112635

Cited by 2 publications

(1 citation statement)

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“…Xue et al [ 19 ] assembled antimonene nanosheets on the surface of a gold chip using layer-by-layer technology and found that the sensitivity of antimonene to the SPR sensor varies with different thicknesses, which is defined as the ratio of the change in resonance angle to the change in the refractive index of the analyte, which is at least 2.3 times higher than existing miRNA sensors, even many orders of magnitude higher. It has a high refractive index in ultraviolet [ 20 ] and nonlinear characteristic behaviors [ 21 , 22 ] in optical properties and has applications in lasers [ 23 , 24 ] and laser protection [ 25 ].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Silicon-Based Antimonene Thin Film via Electron Beam Evaporation

Zhong,

Zeng,

Yang

et al. 2024

Materials

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Antimonene has attracted much attention due to its excellent characteristics of high carrier mobility, thermoelectric properties and high stability. It has great application prospects in Q-switched lasers, laser protection and spintronics. At present, the epitaxy growth of antimonene mainly depends on molecular beam epitaxy. We have successfully prepared antimonene films on silicon, germanium/silicon substrates for the first time using electron beam evaporation coating and studied the effects of the deposition rate and substrate on the preparation of antimonene; film characterization was performed via confocal microprobe Raman spectroscopy, via X-ray diffraction and using a scanning electron microscope. Raman spectroscopy showed that different deposition rates can lead to the formation of different structures of antimonene, such as α phase and β phase. At the same time, it was found that the growth of antimonene is also affected by different substrates and ion beams.

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Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Silicon-Based Antimonene Thin Film via Electron Beam Evaporation

Zhong,

Zeng,

Yang

et al. 2024

Materials

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Ultrafast laser pulses generation by using the ultrasmall topological semimetal TaN quantum dots

Huang,

Long,

Tao

et al. 2024

Funct. Mater. Lett.

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The synthesis of ultrasmall tantalum mononitride (TaN) quantum dots (QDs) is achieved using a straightforward liquid exfoliation technique, starting from bulk TaN. This work presents the evidence of generating an ultrafast laser by employing TaN QDs as a saturable absorber (SA) within an Erbium-doped fiber laser for the first time. Stable ultrashort pulses are generated, exhibiting a center wavelength of 1566.92 nm, a pulse duration of 713 fs, and a cavity repetition rate of 41.39 MHz. Furthermore, the utilization of TaN QDs as an SA in the device exhibits good nonlinear saturable absorption properties with a modulation depth of 1.37%. Those results presented in this study add to the existing literature on the investigation of nonlinear optical characteristics of ultrasmall QDs and also highlight the potential for future development in ultrafast photonic technology.

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Solution-processed antimonene integrated arc-shaped fiber for mode-locked pulse laser generation at 1.9 μm spectral region

Cited by 2 publications

References 50 publications

Fabrication and Characterization of Silicon-Based Antimonene Thin Film via Electron Beam Evaporation

Fabrication and Characterization of Silicon-Based Antimonene Thin Film via Electron Beam Evaporation

Ultrafast laser pulses generation by using the ultrasmall topological semimetal TaN quantum dots

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