2013
DOI: 10.1109/led.2013.2273365
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Solution-Processed Barium Zirconate Titanate for Pentacene-Based Thin-Film Transistor and Memory

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Cited by 5 publications
(8 citation statements)
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“…It is a nanofilm, transparent and insulator. IZOTFT with PBZ gate is good with emobility 4.5cm 2 /V/s and on/off ratio 5x10 5 . It can be used in microelectronics in future.…”
Section: Discussionmentioning
confidence: 97%
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“…It is a nanofilm, transparent and insulator. IZOTFT with PBZ gate is good with emobility 4.5cm 2 /V/s and on/off ratio 5x10 5 . It can be used in microelectronics in future.…”
Section: Discussionmentioning
confidence: 97%
“…Metal Oxide Thin Film Transistors (MOTFT) are a distinct class of metal-oxidesemiconductor field-effect transistors (MOSFET) fabricated by coating a layer of an active semiconductor layer, metallic contacts, and the dielectric layer over an insulating substrate. And, Printed Thin Film Transistors (TFT) are a major application of printed electronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Solution processed inorganic oxide gate dielectric is key element for low voltage MOTFT.…”
Section: Introductionmentioning
confidence: 99%
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