2018
DOI: 10.1016/j.mssp.2018.06.007
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Solution-processed phosphorus-tungsten oxide film as hole injection layer for application in efficient organic light-emitting diode

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Cited by 4 publications
(2 citation statements)
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“…In 2018, Weiwei Deng et al reported an OLED with solution-processed WO 3 -P 2 O 5 , which showed a lower driving voltage for 2.6 V and maximum brightness for 13,553 cd m −2 , respectively [ 62 ]. In 2019, Mangey Ram Nagar et al reported that a solution-processed OLED with MoO 3 :WO 3 showed a PE of 22.9 lm W −1 at 1000 cd m −2 , which was ascribed to the robust hole transporting ability, balanced charge carrier, and non-acidic nature of transition metal oxide HILs [ 69 ].…”
Section: Doped Hole Injection Layermentioning
confidence: 99%
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“…In 2018, Weiwei Deng et al reported an OLED with solution-processed WO 3 -P 2 O 5 , which showed a lower driving voltage for 2.6 V and maximum brightness for 13,553 cd m −2 , respectively [ 62 ]. In 2019, Mangey Ram Nagar et al reported that a solution-processed OLED with MoO 3 :WO 3 showed a PE of 22.9 lm W −1 at 1000 cd m −2 , which was ascribed to the robust hole transporting ability, balanced charge carrier, and non-acidic nature of transition metal oxide HILs [ 69 ].…”
Section: Doped Hole Injection Layermentioning
confidence: 99%
“…As indicated in previous studies, surface roughness plays a significant role in device efficiency [61,62]. In 2011, Anna De Girolamo Del Mauro et al used pure polyaniline (PANI)-poly(styrene sulfonate) (PSS) and dimethyl sulfoxide (DMSO)-doped PANI-PSS as HILs for OLEDs, respectively.…”
Section: Polymer Materialsmentioning
confidence: 99%