Some Physico-Chemical Properties of Bismuth Chalcogenides x-Ray Photoelectron and Diffuse Reflectance Spectra

Ismail, F. M.; Hanafi, Z. M.

doi:10.1515/zpch-1986-26782

Cited by 32 publications

(11 citation statements)

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“…Although the Bi nanowires are prepared at different annealing temperatures, the acquired XPS spectra are rather similar. Figure e demonstrates the Bi 4f core level spectrum of the sample prepared at the annealing temperature of 600 K. It is seen that the Bi 4f 7/2 and Bi 4f 5/2 doublets are located at 157.4 and 162.6 eV, respectively, in line with previous results of Bi Figure f illustrates the Bi 4d core level spectrum.…”

Section: Resultssupporting

confidence: 88%

“…Figure 3e demonstrates the Bi 4f core level spectrum of the sample prepared at the annealing temperature of 600 K. It is seen that the Bi 4f 7/2 and Bi 4f 5/2 doublets are located at 157.4 and 162.6 eV, respectively, in line with previous results of Bi. 27 Figure 3f illustrates the Bi 4d core level spectrum. The Bi 4d 5/2 and Bi 4d 3/2 doublets are situated at 442.3 and 466 eV, respectively, in good agreement with previous reports of Bi grown on Cr 2 Ge 2 Te 6 .…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

Xiao

Zhu

et al. 2023

J. Phys. Chem. C

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The combination of a topological insulator and an antiferromagnet is expected to exhibit the quantum anomalous Hall effect due to the breaking of the time-reversal symmetry. As a layered antiferromagnet, CoNb 3 S 6 was recently found to exhibit an anomalous Hall effect below the Neél temperature (T N = 29 K). Here, we report the controllable growth of Bi nanowires and Bi 2 Se 3 thin films on CoNb 3 S 6 substrates using molecular beam epitaxy. The composition and morphology of the as-prepared Bi nanowires and Bi 2 Se 3 thin films were studied by atomic force microscopy, X-ray photoelectron spectroscopy, and scanning tunneling microscopy. We found that the as-grown Bi nanowires with abundant sizes are oriented along high-symmetry directions of the substrate, forming firework-like structures. Such firework-like structures of Bi nanowires exhibit a high edge-to-surface ratio as well as a strong anisotropy, highly desirable for photoelectric devices and industrial catalysts. The absence of oxidation peaks verifies that the asprepared samples are of high quality and air stability, very promising for applications.

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Section: Resultssupporting

confidence: 88%

Section: ■ Results and Discussionmentioning

confidence: 99%

van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

Xiao

Zhu

et al. 2023

J. Phys. Chem. C

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“…The satellite peak of Cu at 940 eV is retained. Similar to Cu, there is a noticeable change in deconvolution spectra of bismuth; the doublet peak splitting obtained at 159.2 and 164.3 eV (Figure b) corresponds to the 4f 7/2 and 4f 5/2 energy state and is assigned to Bi–Se and Bi–S interaction, respectively. This positive shift of Bi–Se toward higher BE (from 158.1) is due to its interaction with the introduced sulfide species.…”

Section: Resultsmentioning

confidence: 90%

CuBiSe₂ Quantum Dots as Ecofriendly Photosensitizers for Solar Cells

Akhil

Balakrishna

2022

ACS Sustainable Chem. Eng.

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Cu-based ternary chalcogenides have shown high promise as low-cost ecofriendly alternatives to heavy-metal based photosensitizers. The successive ionic layer adsorption and reaction (SILAR) processed CuBiSe2 quantum dots possess an optimal bandgap, appealing photoresponsivity (excellent absorption coefficient of (10)5 cm–1), and photostability. Because of these advantageous properties, they have been investigated as photoabsorber materials for solar cells in this work for the first time. Use of such nontoxic and nonscarce materials, paired with low-temperature solution processing can address both concerns of environmental regulation and fabrication costs. The performance of the prototype solar cell developed has been satisfactory as a new emerging material (power conversion efficiency (PCE) of 2%) unlike the reported CuBiS2 showing a PCE of 0.68%. A further increase in efficiency was observed with the formation of a heterostructure CuBiSe2/CuBiS2 that exhibits a type-1 heterostructure and enables improvement in power conversion efficiency up to 2.6%. CuBiS2 acts as a passivation layer (reducing surface defects and recombination losses) and also as an absorber, facilitating confinement and longer lifetime of charge careers. A detailed investigation of these Cu based selenium quantum dots and the insights provided into their electronic structure and dynamics in this work would significantly influence the future research of these materials into other optoelectronic applications.

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“…The peaks at 154.3 eV, 156.9 eV, and 160.7 eV are ascribed to Si 2s for the Si substrate, Bi 4f for residual Bi metal, and Ga 3s for Ga 2 O 3 , respectively. [33][34][35][36] Three peaks were fitted for the O 1s region, corresponding to Bi 2 O 3 (530.2 eV), Ga 2 O 3 (531.3 eV), and the SiO 2 substrate (533.1 eV), respectively. [37][38][39] For the Ga 3d and Bi 4f regions, an accurate quantitative ratio of Bi 3+ /Ga 3+ was calculated from the Ga-O and Bi-O species to evaluate the Bi 2 O 3 content in the Ga 2 O 3 films (Fig.…”

Section: Resultsmentioning

confidence: 99%

Liquid metal-based printing synthesis of bismuth-doped gallium oxide and its application for a photodetector

Huang,

Guo,

Liu

et al. 2023

J. Mater. Chem. C

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Some Physico-Chemical Properties of Bismuth Chalcogenides x-Ray Photoelectron and Diffuse Reflectance Spectra

Cited by 32 publications

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van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

CuBiSe₂ Quantum Dots as Ecofriendly Photosensitizers for Solar Cells

Liquid metal-based printing synthesis of bismuth-doped gallium oxide and its application for a photodetector

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Some Physico-Chemical Properties of Bismuth Chalcogenides x-Ray Photoelectron and Diffuse Reflectance Spectra

Cited by 32 publications

References 0 publications

van der Waals Epitaxy of Bi Nanowires and Bi2Se3 Thin Films on an Antiferromagnetic Substrate of CoNb3S6

van der Waals Epitaxy of Bi Nanowires and Bi2Se3 Thin Films on an Antiferromagnetic Substrate of CoNb3S6

CuBiSe2 Quantum Dots as Ecofriendly Photosensitizers for Solar Cells

Liquid metal-based printing synthesis of bismuth-doped gallium oxide and its application for a photodetector

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Product

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van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

CuBiSe₂ Quantum Dots as Ecofriendly Photosensitizers for Solar Cells