Spatial alignment evolution of self-assembled In0.4Ga0.6As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy

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Spatial alignment evolution of self-assembled In0.4Ga0.6As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy

Cited by 4 publications

References 23 publications

Structural properties of multi-stacked self-organized InGaAs quantum dots grown on GaAs (311)B substrate

Structural properties of multi-stacked self-organized InGaAs quantum dots grown on GaAs (311)B substrate

Evolution of ordered one-dimensional and two-dimensional InAs/InP quantum dot arrays on patterned InP (100) and (311)B substrates by self-organized anisotropic strain engineering

The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(311)B substrate

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