2017
DOI: 10.1126/sciadv.aao6661
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Spatial charge inhomogeneity and defect states in topological Dirac semimetal thin films of Na 3 Bi

Abstract: Small potential variations in 3D semimetal Na3Bi enable close approach to the Dirac point, allowing exploration of new physics.

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Cited by 18 publications
(46 citation statements)
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“…The dip becomes less clear with increasing thickness and completely disappear for thick films, gradually evolving into the bulk limit ( Figure S5). 30 These spectroscopic characteristics reveal that the DSM Na3Bi experiences a smooth 3D-to-2D dimensional crossover with gap-opening in reduced dimension, from a bulk gapless DSM to a gapped insulator. Similar phenomena of Dirac gap-opening by varying film thickness have been reported for 3D TI Bi2Se3 films.…”
Section: Resultsmentioning
confidence: 96%
“…The dip becomes less clear with increasing thickness and completely disappear for thick films, gradually evolving into the bulk limit ( Figure S5). 30 These spectroscopic characteristics reveal that the DSM Na3Bi experiences a smooth 3D-to-2D dimensional crossover with gap-opening in reduced dimension, from a bulk gapless DSM to a gapped insulator. Similar phenomena of Dirac gap-opening by varying film thickness have been reported for 3D TI Bi2Se3 films.…”
Section: Resultsmentioning
confidence: 96%
“…Topological Dirac semi-metals (TDS) such as Na 3 Bi and Cd 3 As 2 are a new class of materials featuring two degenerate Weyl points with opposite topological charge occurring at the same momentum protected by time reversal symmetry and rotation and inversion. [1][2][3][4] TDS materials have yielded exciting physical properties, such as ultra-low potential fluctuations comparable to the highest quality graphene on h-BN, 5 the chiral anomaly, 6,7 Shubnikov de-Haas oscillations consistent with Weyl orbits, 8 weak anti-localization with phase coherence lengths of up to 1 µm, 9 Dirac gap dependence on the film thickness, 10 and an electric field induced transition from topological insulator to conventional insulator in ultra-thin Na 3 Bi. 11 The low-energy bandstructure of Na 3 Bi results from the overlap of the conduction band dominated by Na-3s states and the valence band dominated by Bi-6p states.…”
Section: Introductionmentioning
confidence: 99%
“…Due to better electronic screening in 3D, spatial fluctuations in Fermi energy in 3D TDS are expected to be much smaller for a comparable disorder. Indeed, low fluctuations in E F of 4 ∼ 6 meV = 40 ∼ 70 K were observed in thin film Na 3 Bi, suggesting the regime T ≥ T F is experimentally accessible [8].…”
mentioning
confidence: 99%
“…Na 3 Bi is a topological Dirac semimetal (TDS) with stable 3D Dirac points separated form the Γ point along the k z axis in its 1st Brillouin zone which has a linear band dispersion in all three momentum space directions [3,4]. The behavior of Dirac fermions in 3D opens up the possibility to study phenomena such as the chiral anomaly [5,6]; thin films geometry offers the opportunity to study ambipolar electronic devices [7], electron-hole pudding [8], along with the theoretical prediction of opening a band gap in excess of 300 meV in monolayer films [9] and a topological phase transition between trivial and non-trivial insulator that occurs at varying thickness or with applied electric field [10,11].…”
mentioning
confidence: 99%