Spatially-chirped optical phased array design and its 10-m LiDAR operation

Shin, Changyong; Shin, Dongjae; Byun, Hyunil; Kim, Jinmyoung; Lee, Jisan; Lee, Changbum; Son, Kyung Hyun; Hwang, Inoh; Shim, Dongshik; Jang, Byung Koog; Lee, Eun Kyung; Choo, Hyuck; Ha, K. H.

doi:10.1364/cleo_si.2021.stu4d.2

Conference on Lasers and Electro-Optics 2021

DOI: 10.1364/cleo_si.2021.stu4d.2

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Spatially-chirped optical phased array design and its 10-m LiDAR operation

Changyong Shin

Dongjae Shin

Hyunil Byun

et al.

Abstract: Novel optical phased array design based on spatially-chirped spacing is presented for solid-state beam steering. Its 128-channel implementation achieved 2.1-dB higher side- mode suppression ratio compared to previous results. 10-m 3D depth imaging was also demonstrated.

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Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Shin

Byun

Shim

et al. 2022

J. Lightwave Technol.

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The CMOS industry has been expecting silicon photonics to provide photonic and electro-photonic integrated circuits based on the CMOS processes and infrastructures for scalability of incumbent technology evolutions and creation of novel technologies. However, the compatibility with the legacy CMOS has been compromised with the development convenience of early silicon photonics in that the specialty silicon-on-insulator substrates have been widely used as integration platforms. Since this specialty substrate may hinder the photonics integration with legacy volume products later, a legacy-friendly integration platform with a generic bulk-silicon substrate has been developed for better compatibility. This paper overviews the bulk-silicon photonics platform born for DRAM integration, upgraded with III/V-on-bulk-Si lasers, and transplanted to LiDAR applications requiring the virtuous cycle of cost and volume. The photonics integration with DRAM was to resolve the speed-capacity tradeoff in the DRAM interconnects, and technical feasibility as well as lessons learned from the integration attempt are reviewed. The bulk-silicon device performance approaches that of silicon-oninsulator devices with the thermal advantage of ~40-% lower thermal impedance and the optical disadvantage of ~0.4-dB/mm higher waveguide loss. In the LiDAR applications, detection performance up to ~20 m at 20 fps by a single-chip scanner integrating tunable laser, semiconductor optical amplifiers, and optical phased array are presented with future outlooks.

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Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Shin

Byun

Shim

et al. 2022

J. Lightwave Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

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Spatially-chirped optical phased array design and its 10-m LiDAR operation

Abstract: Novel optical phased array design based on spatially-chirped spacing is presented for solid-state beam steering. Its 128-channel implementation achieved 2.1-dB higher side- mode suppression ratio compared to previous results. 10-m 3D depth imaging was also demonstrated.

Cited by 1 publication

References 4 publications

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

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